High-k/hydrogenated-diamond metal-insulator-semiconductor

field effect transistors fabrication

Jiangwei Liu

ICYS-NAMIKI

Diamond has wide band gap, a high melting point, a large thermal conductivity, a high breakdown field, large saturation velocity, and high carrier mobility. These characteristics make it possible to fabricate high power and high frequency metal-insulator-semiconductor field effect transistors (MISFETs). In order to fabricate high performance diamond-based MISFETs, it is necessary to search a suitable gate insulator. Since the insulator with a higher-dielectric constant (higher-k) can provide the same charge response at a smaller electrical field, we will focus on the fabrication of the high-k material on the H-diamond.