Photo·electricity energy-conversion devices based on III-Nitride semiconductors

Liwen sang

The re-evaluation of the bandgap energy of InN extends the basic absorption wavelength of III-Nitride semiconductors from the infrared (InN at 0.65 eV) through the visible and ultraviolet (UV) (GaN at 3.42 eV) to the deep UV range (AlN at 6.2 eV), which almost cover all the solar spectrum. This unique property provides InGaN film the promising candidate in the photoelectrical energy conversion devices, such as high-performance visible-blind photodiodes and high-efficiency photovoltaic cells.

In this presentation, we report on the high-performance photoelectricity energy conversion devices based on III-Nitride semiconductor InGaN film, high-performance visible-blind photodiodes and high-efficiency photovoltaic cells.