Two-Dimensional Chalcogenides for Ultimate Electronics

Songlin Li (ICYS-MANA)

Two-dimensional metal chalcogenides emerged as promising candidates for the post-silicon conduction channels due to the concurrence of atomic thickness and flatness, excellent process compatibility and sizable energy gap. In my three-year stay in ICYS, I am devoted to developing atomically thin chalcogenides as next-generation field-effect transistors. A summary on several physical and technological issues, including characterization of atomically layers, carrier injection and scattering mechanisms will be addressed in this farewell talk.