Giant magnetoresistance effect due to interface resonant tunneling in (111) oriented MTJs

Magnetic tunnel junctions (MTJs) have a structure in which an insulator is sandwiched between ferromagnetic materials and are used in various magnetic sensors and next-generation nonvolatile memories. Theoretical proposal of novel MTJs with better properties is one of our important research themes. Recently, we have studied (111) oriented MTJs [Figure (b)], which have a different structure from conventional (001) oriented MTJs [Figure (a)], and found that a very large magnetoresistance ratio can be obtained (Masuda et al., 2020; Masuda et al., 2021). We have also found that this giant magnetoresistance ratio is caused by a new mechanism called interfacial resonance tunneling. Further experimental and theoretical studies on such novel (111) oriented MTJs are expected in the future.

References

2021

  1. Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
    Keisuke Masuda, Hiroyoshi Itoh , Yoshiaki Sonobe , Hiroaki Sukegawa , Seiji Mitani , and Yoshio Miura
    Phys. Rev. B, Feb 2021

2020

  1. Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions
    Keisuke Masuda, Hiroyoshi Itoh , and Yoshio Miura
    Phys. Rev. B, Apr 2020