Zhenchao Wen

Post-doctoral Researcher
Email: Wen.zhenchao@nims.go.jp
Phone: +81 (29) 859-2000-6729
FAX: +81 (29) 859-2701

Education
Ph.D. 2010, Institute of Physics, Chinese Academy of Sciences
M.S. 2007, Institute of Physics, Chinese Academy of Sciences
B.S. 2005, Lanzhou University, China

Positions
May. 2010-current: Post-doctoral Researcher, National Institute for Materials Science

Publications
TMR in perpendicularly magnetized Co₂FeAl full-Heusler alloy based MTJs with MgO barrier.
Z. C. Wen, H. Sukegawa, S. Kasai, M. Hayashi, S. Mitani, and K. Inomata.
Appl. Phys. Express 5 (2012) 063003.

Spin-transfer switching in full-Heusler Co₂FeAl-based magnetic tunnel junctions.
H. Sukegawa, Z. C. Wen, K. Kondou, S. Kasai, S. Mitani, and K. Inomata.
Appl. Phys. Lett. 100 (2012) 182403.

Competition between cotunneling, Kondo effect, and direct tunneling in discontinuous high-anisotropy MTJs.
D. Ciudad, Z. C. Wen, A. T. Hindmarch, E. Negusse, D. A. Arena, X.-F. Han, and C. H. Marrows.
Phys. Rev. B 85 (2012) 214408.

Perpendicular magnetization of Co₂FeAl full-Heusler alloy films induced by MgO interface.
Z. C. Wen, Hiroaki Sukegawa, Seiji Mitani, and Koichiro Inomata.
Appl. Phys. Lett. 98 (2011) 242507.

TMR in textured Co₂FeAl/MgO/CoFe magnetic tunnel junctions on a Si/SiO2 amorphous substrate.
Z. C. Wen, Hiroaki Sukegawa, Seiji Mitani, and Koichiro Inomata.
Appl. Phys. Lett. 98 (2011) 192505.

Patterned nanoscale magnetic tunnel junctions with different geometrical structures.
Z. C. Wen, Y. Wang, G. Q. Yu, H. X. Wei, B. S. Zhang, K. Xu, and X. F. Han.
Spin, 1 (2011) 109.

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