World’s Highest Performance Nanodielectrics
Tailor-Made Nanocrystals via controlled nanoscale doping
National Institute for Materials Science
Japan Science and Technology Agency
A research group led by MANA Scientist Dr. Minoru Osada and MANA Principal Investigator Dr. Takayoshi Sasaki of the International Center for Materials Nanoarchitectonics , National Institute for Materials Science, developed new doping technique which enables fine tuning of chemical composition and structure in oxide nanocrystals.
Abstract
A research group led by MANA Scientist Dr. Minoru Osada(*Open in new window) and MANA Principal Investigator Dr. Takayoshi Sasaki of the International Center for Materials Nanoarchitectonics (MANA; Director-General: Masakazu Aono), National Institute for Materials Science (President: Sukekatsu Ushioda), developed new doping technique which enables fine tuning of chemical composition and structure in oxide nanocrystals. In one-nanometer-thick TiO2-based nanosheets, the distrotion induced by Nb doping results in large permittivity (εr =320) and simultaneously stabilizes their dielectric response in a ultrathin form (< 10 nm). By applying this technology, the group succeeded in the development of dielectric nanofilms with the world’s highest performance.
Such a doping, a well-known technique in bulk materials, is now useful for designing high-k properties of individual nanocrystals. Our work provides a new recipe for designing nanodielectrics desirable for future capacitor and memory devices.
This research was carried out as a part of the Core Research for Evolutional Science and Technology (CREST) project “Creation of New Nanomaterials and Manufacturing Processes for Next-Generation Electronics using Inorganic Nanosheets” (Project Leader: Takayoshi Sasaski) in Japan Science and Technology Agency (JST).
Such a doping, a well-known technique in bulk materials, is now useful for designing high-k properties of individual nanocrystals. Our work provides a new recipe for designing nanodielectrics desirable for future capacitor and memory devices.
This research was carried out as a part of the Core Research for Evolutional Science and Technology (CREST) project “Creation of New Nanomaterials and Manufacturing Processes for Next-Generation Electronics using Inorganic Nanosheets” (Project Leader: Takayoshi Sasaski) in Japan Science and Technology Agency (JST).
Figure : Tailor-made dielectric nanosheet via controlled nanoscale doping. (a) Structural change induced by Nb doping. (b) AFM image of Nb-doped nanosheet.
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