Visualization of conductive electrons in an organic transistor
-The origin of negative resistance-

Organic p–n junction transistors show markedly large negative resistances even at room temperature. We clarified the origin of negative resistance using photoemission electron microscopy. We found that a steep potential gradient at the lateral p–n interface enhanced the electron conduction. In contrast, the conduction was suppressed when n-type or p-type semiconductor layer was completely depleted. This achievement was made by a collaborative work between NIMS, University of Tsukuba and KEK.

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Article Information

Title Carrier Transport Mechanism in Organic Antiambipolar Transistors Unveiled by Operando Photoemission Electron Microscopy
Journal Advanced Materials
Date May 30, 2022
DOI 10.1002/adma.202201277