Date & Time |
16 April 2008 (Wed), 3:30 pm - 5:00 pm
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|---|---|
Place |
8F larger seminar room, Sengen site
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Speaker |
Dr. Eric J. Cockayne
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Affiliation |
Ceramics Division, National Institute of Standards and Technology (NIST), USA
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Title |
Effect of defects on the structure, electronic structure, and dielectric properties of HfO2
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Abstract |
This talk details the results of first-principles density functional theory studies of the effect of various defects on the structure, electronic structure, and dielectric properties of HfO2. The defects studied include oxygen vacancies, ionic substitutions, interstitials, and combinations of defects. Most defects cause a larger permittivity due to a variety of factors; the most significant enhancement occurs if the tetragonal or cubic phase of HfO2 is stabilized with respect to the monoclinic phase. The effect of Al substitution on Si-SiO2-HfO2 gate stacks is also investigated, and discussed in terms of a dipole model.
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Contact |
Dr. Naoto Umezawa (梅澤直人) 
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Effect of defects on the structure, electronic structure, and dielectric properties of HfO2
