ホーム > 研究活動 > 2018年 > Fabrication of L10-FeNi phase by sputtering with rapid thermal annealing

研究活動

Fabrication of L10-FeNi phase by sputtering with rapid thermal annealing

Journal of Alloys and Compounds vol.750 (2018)

Takayuki Tashiro, Masaki Mizuguchi, Takayuki Kojima, Tomoyuki Koganezawa, Masato Kotsugi,Takumi Ohtsuki, Kazuhisa Sato, Toyohiko Konno, Koki Takanashi ( https://doi.org/10.1016/j.jallcom.2018.02.318 )

Abstract

FeNi films were directly deposited on MgO(001) substrates by co-sputtering and rapid thermal annealing (RTA). The formation of the L10 phase was investigated for films with different thicknesses and different annealing conditions by grazing incidence X-ray diffraction. For the FeNi films with a thickness of 5 nm, superlattice 001 and 110 peaks were observed after annealing at a heating rate of 50  C/s, which indicates that three variants of L10 grains were formed in the films. The maximum long-range order parameter, which corresponded to a volume-averaged parameter, was approximately 0.11. For the FeNi films with a thickness of 30 nm, a superlattice 110 peak was only observed after annealing at a heating rate of 50  C/s, and the formation of 001 textured grains was clarified. Magnetic properties also changed depending on the FeNi film structures. The formation mechanism of L10-FeNi is discussed based on the strain caused by RTA in the FeNi films.

その他特記事項

This work was supported in part by the Elements Strategy Initiative Project under the auspices ofMEXT and JST. The synchrotron radiation experiments were conducted at the BL46XU of SPring-8with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal No.2013A1637, 2013A1832, 2013B1590, 2016A1544, and 2016A1771).


研究活動

文部科学省

文部科学省
元素戦略プロジェクト(活動紹介)
NIMS磁石パートナーシップ

元素戦略拠点

触媒・電池元素戦略拠点
触媒・電池元素戦略研究拠点 (京都大学)
東工大元素戦略拠点
東工大元素戦略拠点 (東京工業大学)
構造材料元素戦略研究拠点
構造材料元素戦略研究拠点 (京都大学)
高効率モーター用磁性材料技術研究組合
高効率モーター用 磁性材料技術研究組合