Magnetization Damping of an L10-FeNi Thin Film with Perpendicular Magnetic Anisotropy
Applied Physics Letters 103, 242409
Applied Physics Letters ( DOI: 10.1063/1.4845035 )
Misako Ogiwara ( IMR, Tohoku Univ. )
Satoshi Iihama ( Tohoku Univ )
Takeshi Seki ( IMR, Tohoku Univ. )
Takayuki Kojima ( IMR, Tohoku Univ. )
Shigemi Mizukami ( WPI-AIMR, Tohoku Univ )
Masaki Mizuguchi ( IMR, Tohoku Univ. )
Koki Takanashi ( IMR, Tohoku Univ. )
Abstract
We studied on the magnetic damping constants (α) for L10-FeNi and disordered FeNiemploying three kinds of measurement methods.
An L10-FeNi thin film exhibited highperpendicular magnetic anisotropy of 7.1 × 106 erg cm-3.
At magnetic fields (H) lower than 2kOe, α was estimated to be 0.091 ± 0.003.
However, it was reduced down to 0.013 ± 0.001with H, indicating that extrinsic contributions enhance α.
The intrinsic α = 0.013 ± 0.001was comparable to α = 0.009 ± 0.002 for the disordered FeNi.
This suggests that L10-FeNiis a candidate achieving high magnetic anisotropy and low magnetization dampingsimultaneously.
An L10-FeNi thin film exhibited highperpendicular magnetic anisotropy of 7.1 × 106 erg cm-3.
At magnetic fields (H) lower than 2kOe, α was estimated to be 0.091 ± 0.003.
However, it was reduced down to 0.013 ± 0.001with H, indicating that extrinsic contributions enhance α.
The intrinsic α = 0.013 ± 0.001was comparable to α = 0.009 ± 0.002 for the disordered FeNi.
This suggests that L10-FeNiis a candidate achieving high magnetic anisotropy and low magnetization dampingsimultaneously.
その他特記事項
Grant-in-Aid for Scientific Research（S） （25220910）
