A group at the Max Planck Institute led by Professor H. Dosch recently performed detailed studies on the gap between water and a water-repelling surface. Silicon wafers, functionalized by a self-assembled monolayer of octadecyl-trichlorosilane (OTS), provide strongly hydrophobic substrates. The main interest here is what happens when water comes onto the OTS layer. The experiment was not easy, because the liquid water-solid interface is deeply buried in this case. In this research, X-ray reflectivity measurements using an unusually high-energy beam (72.5 keV) were carried out. The results indicate the existence of a hydrophobic gap on a molecular scale at the solid-water interface. For more information, see the paper, "High-resolution in situ X-ray study of the hydrophobic gap at the water-octadecyl-trichlorosilane interface", M. Mezger et al., Proc. Natl. Acad. Sci. USA, published online before print November 20, 2006
Argonne National Laboratory researchers in collaboration with Xradia, Inc. have developed a novel X-ray surface topography technique by combining X-ray reflection, which is sensitive to height or depth on a sub nanometer scale, and full-field X-ray microscopy with condenser and objective Fresnel zone plates. Recent rapid progress in X-ray microscopy now allows scientists to obtain X-ray images with ca. 10 nm spatial resolution. However, so far, almost all full-filed imaging has employed transmission geometry. The present research has extended the technique to reflection geometry. It has become possible to image the distribution of molecular-scale interfacial features directly and non-invasively with full-field imaging. Interfacial phase contrast from elementary defect structures allows direct observation of 0.6-nm-high monomolecular steps at a solid surface. For more information, see the paper, "Observation of subnanometre-high surface topography with X-ray reflection phase-contrast microscopy", P. Fenter et al., Nature Physics, 2, 700-704 (2006).
Professor P. Pershan (Harvard University, USA) and his colleagues recently found a crystalline monolayer at the surface of the eutectic liquid Au82Si18, at temperatures above the alloy's melting point. This is unusual for a liquid surface, as the atomic arrangements are ordinarily strongly disordered. In addition, they found that the gold-silicon eutectic alloy has 7-8 layers near its surface, whereas many metallic liquids typically show only 2-3 distinct atomic layers. The phenomena are considered as indicative of surface freezing. The research group employed X-ray reflectivity and grazing incidence X-ray diffraction techniques for the analysis. For more information, see the paper, "Surface Crystallization in a Liquid AuSi Alloy", Oleg G. Shpyrko et al., Science 313, 77 (2006).
Corrosion detracts some 3% from global GDP. From a positive point of view, however, chemical attack of metal surfaces may result in surface nano-structures with interesting technological applications such as catalysts and sensors. Professor H. Dosch (Max Planck Institute) and his colleagues have recently clarified a self-organization process on the surface of Cu3Au(111) single crystal alloy in a sulphuric acid solution, by means of a sophisticated X-ray diffraction technique with the aid of a brilliant synchrotron beam at ESRF, Grenoble, France. They observed many interesting phenomena. In the initial moments of corrosion, an extremely thin gold-rich layer, which had an unexpected crystalline and well-ordered structure, was formed. As the corrosion proceeded, this alloy layer was transformed into gold nano-islands of 20 to 1.5 nm. These islands eventually developed into a porous gold metal layer. For more information, see the paper, "Initial corrosion observed on the atomic scale", F. U. Renner et al., Nature, 439, 707-710 (2006).
At SPring-8, Harima Japan, Dr. M. Takahasi (Japan Atomic Energy Agency) and his coworkers have recently established a powerful surface X-ray diffraction tool for observing the growth process of semiconductor-like GaAs. The main feature of the method is the use of multi-energy X-rays, and because of this, it is possible to identify both the atomic arrangements and the type of atoms. Another significant advantage is the capability of real-time monitoring due to the employment of a brilliant undulator beam. It was demonstrated that the surface structure called c(4x4), which is observed under certain growth conditions, has dimmers that consist of gallium and arsenic atoms in the top surface layer. For more information, see the paper, "Element-Specific Surface X-Ray Diffraction Study of GaAs(001)-c(4×4)", M. Takahasi et al., Phys. Rev. Lett. 96, 055506 (2006).
The distribution of ions in solution at an interface is key to the fundamental understanding of electrochemistry as well as to the design of materials and devices such as biomembranes. So far, classical descriptions of ion distributions, such as the Guoy-Chapman theory (see, G. Gouy, C. R. Acad. Sci. 149, 654 (1910) and D. L. Chapman, Phil. Mag. Ser. 6 25, 475 (1913)), which ignores the details of molecular structure, have been widely used. Professor M. Schlossman (University of Illinois at Chicago) and his colleagues recently performed very precise X-ray reflectivity measurements to obtain experimentally ion distributions at the interface between solutions (0.01 ~0.08M) of tetrabuytlammonium (TBA) tetraphenylborate (TPB) in nitrobenzene and aqueous TBA bromide. They found significant deviations from the Guoy-Chapman theory in describing their data. However, on the other hand, molecular dynamics calculations produced potentials that could be used to predict distributions with the Poisson-Boltzmann equation without adjustable parameters. The experiments were done at the Chemistry and Materials section of the Consortium for Advanced Radiation Sources (ChemMatCARS) beamline 15-ID at the Advanced Photon Source (APS, at Argonne National Laboratory). For more information, see the paper, "Ion Distributions near a Liquid-Liquid Interface", L. Guangming et al., Science, 311, 216-218 (2006).
Control of nano-structures with molecular precision is a key problem in nano sciences and technologies. While the surface can be readily imaged by scanning probe microscopes, it is not easy to observe buried structures nondestructively. Dr. O. Sakata and his colleagues recently reported on their success in fabricating Bi nanowires on a Si(001) substrate and their encapsulation in an epitaxially grown crystalline silicon layer. To explore the buried nanowires, they employed X-ray diffraction (reciprocal-lattice space mapping) with 25.3 keV photons at grazing-incidence geometry (~0.1 deg) using an image plate as a 2D detector. The results indicate that the nanolines maintain their one-dimensional character and Bi dimerization. The experiments were carried out at beamline BL13XU, SPring-8, Harima, Japan. For more information, see the paper, "Encapsulation of atomic-scale Bi wires in epitaxial silicon without loss of structure", O. Sakata et al., Phys. Rev. B 72, 121407(R) (2005).