Nano-Electronic Materials Unit
Nanoscale Materials Division (MANA), Nano-Materials Field

The modern electronics are on the turn-around point in materials. The past , Al or SiO₂ which has an affinity to Si has been used and the functionalities are expressed by sophisticatedly manufactured structures. Therefore the device structures has been complicated gradually and now it almost close to the fabrication limit. Therefore for the future nano device need a new materials which gives superior performance in nano scale.

The future nano devices including LSI are composed of a lot of interfaces with various materials. Our unit is researching the gate stack materials, such as higher-k dielectric and work function tunable amorphous metal gate, new characterization tools to evaluate band alignment by XPS or to visualize invaded defects. Also a fusion of nano device and organic materials is tried for the feasibility study as a new functional device.