MANA Foundry

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Dedication to innovative nano-level material inventions through comprehensive research support from nanofabrication, structural observation and characteristic evaluation.

As one of the facilities of International Center for Materials Nanoarchitectonics, MANA Foundry carries out research support with techniques of nanofabrication and characterization. For the researchers from all over the world and extensive fields, we carry equipment to treat various materials and our experienced staff provide their subtle research support. Our goal is to dedicate our nanofabrication process and techniques of structural observation and characterization to innovative nano-level material invention.

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Our Support

MANA Foundry provides uniform research support from creating samples by nanofabrication to structural observation and characterization.

1. Nanofabrication Process

Various fine-structure creation is made possible by combining the techniques of lithography, film deposition and etching processes. For example, we are able to fabricate nanogap electrodes and to create electrodes precisely aligned onto fine samples such as nanowires. Also, it’s possible to structure multi-layers with various materials and to deposit combined materials as well.

4-terminaled electrodes for the nanowires’ characteristic evaluation


Nanogap-electrode structure of which different material electrodes coexist


A substrate surface where holes have been patterned on by nanofabrication process


Single-crystal nanorods that have grown through the holes




Moreover, we have an expert operator for focused ion beam (FIB) fabrication to perform micron-order sample quarrying commonly for transmission electron microscope (TEM) observation purpose and 3D nanofabrication. Other processes we offer include heat treatment of samples, wiring with exterior circuits, substrate dicing and chip section.

FIB picking up a particular part of cut sample surface. This is one of the steps of TEM sample fabrication.


Silicon substrate that has been fabricated by FIB to form a periodic structure.


Wiring between electrodes by wire bonding using 30μm gold wires.




2. Structural Observation

SEM images of pattern fabrications: Anisotropy wet etching on Si substrate (left) and dry etching SiO2 substrate (right)


Observation of fine structures by scanning electron microscope (SEM) and atom-level measurement of surface forms by atomic force microscope (AFM) are available.


Measurement by AFM on surface of Sapphire single crystal consisting of 0.2nm tall atomic steps and flat and even terraces in atomic level.




3. Characterization and Analysis

Electrical properties of devices can be measured in a temperature range of 8~300K with semiconductor parameter analyzer. By using X-ray photoelectron spectroscopy (XPS), you can analyze and evaluate the depth profiless of chemical properties, and by using spectroscopic ellipsometer, you can do fitting analyses on the thickness and optical constants of each layer in multilayered structures. These processes are employed for researches corresponding with characteristics and structures of devices and conditions of materials.


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MANA Foundry
1-1 Namiki, Tsukuba, Ibaraki 305-0047, JAPAN
TEL: +81-29-860-4838
E-Mail: MANA.Foundry=nims.go.jp
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