Facilities, short presentation Our laboratory disposes of equipments for the growth and the characterization of III-V nitride thin film, optical and electronics properties, metal deposition as well as equipments necessary for solar cells characterizations: 1. Metal Organic Chemical Vapor Deposition (MOCVD) with a horizontal reactor For III-V nitride thin films growth, TriMethylGallium (TMG), TriMethylIndium (TMI), TriMethylAluminium (TMA) and Ammonia (NH3) are used as Ga, In, Al and N sources. It is possible to grow epitaxial thin film on different substrate sizes from 0.5cm2 to 2 inches wafer. 2. X-ray Diffraction (XRD) characterization After optimizing σ,ω,φ and ψ angles, X’Pert Pro equipment is used for 2σ-ω scan and reciprocal space mappings (RSMs) with a high resolution about 1?10-4 degree. 3. Transmittance measurement An UV-3150 Shimadzu (large spectral scale from 200nm to 3200nm) is used to measure the transmittance spectrum of grown thin films and estimate the optical band gap. 4. Photoluminescence (PL) measurement Photoluminescence spectrum can be measured by a couple Cd-He laser + monochromator in order to determine the optical band ga. . 5. E-beam evaporator This e-beam evaporator disposes of 3 metallic sources, titanium, gold and nickel used for ohmic or Schottky contacts. Thicknesses deposited can be precisely controlled at the scale of 10 nanometers under low vacuum level about 1~2?10-7 Torr. 6. Transparent Conductive Organic (TCO) polymer deposition The TCO polymer is deposited by Mikasa spincoater MS-A100 to control efficiently the homogeneity and the films thickness. 7. Current-Voltage, Capacitance-Voltage characterization Filtered Xe lamp is used to obtain the standard AM1.5G solar spectrum. The current-voltage (I-V) is precisely measured using Keithley 2400 SourceMeter and Keithley 6487 picoammeter equipments. Capacitance-voltage characteristics are measured by Hioki 3522-50 LCR Hitester. Other equipments: - AFM - Seebeck measurement - ZnO MOCVD and Plasma CVD - RHEED