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E-gun evaporation system |
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Product |
RDEB-1206K |
Manufacturer |
R-DEC Co. Ltd. |
Capabilities |
Target: Ti, Cr, Al, Ni, Co, Pt, Au, Pd, Ag, AuGe, Ge, etc.
Film Uniformity: within ±10% on 3" wafer
Distance between Target and Substrate: 450 ~ 550mm |
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Sputtering system |
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Product |
jsputter |
Manufacturer |
ULVAC |
Capabilities |
Target: Cr, Ti, Au, Al, Cu, W, Mo, Pt, ITO, Si, SiO2, TiO2, Al2O3, Si3N4, ZnO, WC, etc.
Cathode : 4 Sets of Magnetron Cathode ( @ 4" )
Film Uniformity: within 5% on SiO2 @ 6" wafer
Process Gasses: Ar, O2, N2
Distance between Cathode and Substrate: 120mm
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Ultra high vacuum sputtering system |
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Product |
- |
Manufacturer |
Biemtron |
Capabilities |
Target: Cr, Ti, Al, Au, Pt, SiO2, etc.
Base pressure: 1×10-7 Pa
Cathode : 4 Sets of Magnetron Cathode ( @ 2" )
Film Uniformity: within 5% on SiO2 @ 2" wafer
Process Gasses: Ar, O2
Distance between Cathode and Substrate: 75mm±25mm
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Atomic Layer Deposition(ALD) System |
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Product |
SUNALETM R-100B |
Manufacturer |
ALTEC Co., Ltd. (Picosun) |
Capabilities |
Substrate sizes: small piece ~4” wafer
Material: Al2O3, HfO2
Substrate temperature: 100 ~ 450 degrees C |
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Plasma enhanced chemical vapor deposition(PECVD) system |
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Product |
PD-220NL |
Manufacturer |
SAMCO International Inc. |
Capabilities |
Equipped with a load-lock chamber
Process Gasses: TEOS, O2
Maximum wafer size: 8" wafer
Substrate temperature: less than 400 degrees C |
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Rapid thermal annealing(RTA) system |
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Product |
QHC-P410 |
Manufacturer |
ULVAC-RIKO Inc. |
Capabilities |
Maximum temperature: 1350 degrees C
Rate of rising temperature: less than 40 degrees C / sec
Rate of falling temperature: 10 degrees C / sec
Atmosphere: Ar, N2, 3%H2+Ar, Vacuum
Substrate sizes: less than 20mm square × 4
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Thermal oxide and annealing furnace |
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Product |
MT-2-6X20-A |
Manufacturer |
Koyo Thermo System Co. Ltd. |
Capabilities |
Operation temperature: 300 ~ 1000 degrees C
Oxide atmosphere: Dry, Wet (by bubbling system)
Annealing atmosphere: O2, N2
Maximum wafer size: 2“ wafer
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