Fabrication of Semiconductor Quantum Nanostructures
We mainly investigate the fabrication, structural analysis, and device application of semiconductor quantum nanostructures by means of MBE, MOCVD, electron beam assisted deposition, etc. In the second mid-term research project that started in 2006, we have achieved (1) improvement of fabrication technologies for GaAs quantum dots, quantum dot pairs, quantum single rings, and quantum double rings to realize increased crystal quality and delicate control of the particle size, shape, and density, (2) GaAs quantum dot laser by photo excitation at room temperature, (3) anti-bunching of excitonic emission of GaAs single quantum dots, (4) C-V characteristics with small frequency dispersion by insertion of an ultrathin Ge layer to HfO2/GaAs based CMOS, and (5) photo voltage by a solar cell with ten layers of GaAs quantum dots.
