2010
1. Manifold enhancement of electron beam induced deposition rate at grazing incidence
S. Ilya, Y. Nakayama, K. Mitsuishi
Nanotechnology 21, 025303 (2010)
2. One-and two-dimensional spectral diffusion oftype-II excitons in InP/InAs/InP core-multishell nanowires
Y. Masumoto, K. Goto, S. Yoshida, Y. Sakuma, P. Mohan, J. Motohisa, and T. Fukui
Phys. Rev. B 82, 075313 (2010)
3. Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
K. Takemoto, Y. Nambu, T. Miyazawa, K. Wakui, S. Hirose, T. Usuki, M. Takatsu, N. Yokoyama, K. Yoshino, A. Tomita, S. Yorozu, Y. Sakuma, and Y. Arakawa
Appl. Phys. Express 3, 092802 (2010)
4. Effect of Interface Oxidation on the Electrical Characteristics of HfO2/Ultrachin-Epitaxial-Ge/GaAs(100) Structures
N. Miyata, Y. Urabe, T. Yasuda, and A. Ohtake
Appl. Phys. Express 3, 035701 (2010)
5. Magic Cluster Arrays of In and In/Ag Compound on Si(111)-7×7 studied by UHV-TEM / STM
M. Tanaka, A. Teraoka, and M. Shimojo
Surf. Interf. Anal. 42, 1520-1523 (2010)
6. Morphological and Structural Properties of beta-Ga2O3 nanostructures
T. Yasuda, Q. Yang, S. Honda, K. Ogino, H. Tatsuoka, M. Tanaka, P. D. Brown
ECS Transactions 16, 33-38 (2010)
7. ZnO belt-like structures grown using ZnS substrates with Ga droplets
Q. Yang, M. Tanaka, T. Yasuda, H. Tatsuoka
IEICE Transactions on Electronics 92, 1479-1482 (2010)
8. Magneto-optical properties of excitonic complexes in GaAs self-assembled quantum dots
M. Abbarchi, T. Kuroda, T. Mano, K. Sakoda, M. Gurioli
Phys. Rev. B 81, 35334 (2010)
9. Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
J. Keizer, J. Bocquel, P. M. Koenraad, T. Mano, T. Noda, and K. Sakoda
Appl. Phys. Lett. 96, 62101 (2010)
10. Poissonian excitonic population of single QDs
M. Abbarchi, T. Kuroda, C. Mastrandrea, A. Vinattieri, T. Mano, K. Sakoda, and M. Gurioli
Physica E, 42, 884-886 (2010)
11. Fine structure splitting of quantum dot excitons: Role of geometry and environment
M. Abbarchi, T. Kuroda, C. Mastrandrea, A. Vinattieri, S. Sanguinetti, T. Mano, K. Sakoda, and M. Gurioli
Physica E, 42, 881-883 (2010)
12. Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy
M. Jo, T. Mano, and K. Sakoda
Appl. Phys. Express 3, 45502 (2010)
13. Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
T. Mano. M. Abbarchi, T. Kuroda, B. Mcskimming, A. Ohtake, K. Mitsuishi, and K. Sakoda
Appl. Phys. Express 3, 65203 (2010)
14. Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
M. Jo, T. Mano, and K. Sakoda
J. Appl. Phys. 108, 83505 (2010)
15. Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
T. Belhadj, T. Amand, A. Kunold, C.-M. Simon, T. Kuroda, M. Abbarchi, T. Mano, K. Sakoda, S. Kunz, X. Marie, and B. Urbaszek
Appl. Phys. Lett. 97, 51111 (2010)
16. Energy renormalization of exciton complexes in GaAs quantum dots
M. Abbarchi, T. Kuroda, T. Mano, K. Sakoda, C. A. Mastrandrea, A. Vinattieri, M. Gurioli, and T. Tsuchiya
Phys. Rev. B 82, 201301 (2010)
17. Nanoscale Energy-Filtered Scanning Confocal Electron Microscopy Using a Double-Aberration-Corrected Transmission Electron Microscope
P. Wang, G Behan, M. Takeguchi, A. Hashimoto, K. Mitsuishi, M. Shimojo, A.I. Kirkland, P.D. Nellist
Phys. Rev. Lett. 104, 200801 (2010)
18. Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography
S. Ilya, Y. Nakayama, K. Mitsuishi
Nanotechnology 21, 285307 (2010)
19. Transport properties and microstructures of polycrystalline In2O3-ZnO thin films
K. Makise, K. Mitsuishi, N. Kokubo, T. Yamaguchi, B. Shinozaki, Y. Yano, K. Inoue, H. Nakamura
J. Apple. Phys. 108, 023704 (2010)
2009
1. Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes
Y. Irokawa, N. Matsuki, M. Sumiya, Y. Sakuma, T. Sekiguchi, T. Chikyo, Y. Sumida, and Y. Nakano
Phys. Stat. Sol. ( RRL) 3, 266 (2009).
2. Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth
T. Nagata, M. Haemori, Y. Sakuma, T. Chikyo, J. Anzai, and T. Uehara
J. Appl. Phys. 105, 066106-1 (2009)
3. A nanosized photodetector fabricated by electron-beam-induced deposition
K. Makise, K. Mitsuishi, M. Shimojo, K. Furuya
Nanotechnology 20, 425305 (2009)
4. Measuring interface electrostatic potential and surface charge in a scanning electron microscope
S. Ilya, Y. Nakayama, K. Mitsuishi
J. Vac. Sci. & Technol. B27, 2357 (2009).
5. Composition Control of Electron Beam Induced Nanodeposits by Surface Pretreatment and Beam Focusing
S. Ilya, Y. Nakayama, K. Mitsuishi
J.Phys. 113, 21516 (2009)
6. Variable stoichiometry in Sb-induced (2x4) reconstructions on GaAs(001)
A. Ohtake, M. Hirayama, J. Nakamura, A. Natori
Phys. Rev. B 80, 235329 (2009).
7. Bunching visibility for correlated photons from single GaAs quantum dots
T. Kuroda, T. Belhadj, M. Abbarchi, C. Mastrandrea, M. Gurioli, T. Mano, N. Ikeda, Y. Sugimoto, K. Asakawa, N. Koguchi, K. Sakoda, B. Urbaszek, T. Amand, and X. Marie
Phys Rev. B 79, 35330 (2009)
8. Optical orientation of electron and nuclear spins in strain free GaAs quantum dots grown by droplet epitaxy
T. Belhadj, T. Kuroda, C. Simon, T. Amand, T. Mano, K. Sakoda, N. Koguchi, X. Marie, and B. Urbaszek
Phys. Stat. Sol. (B) 246, 762-765 (2009).
9. Magneto photoluminescence in droplet epitaxial GaAs quantum rings
T. Kuroda, T. Belhadj, T. Mano, B. Urbaszek, T. Amand, X. Marie, S. Sanguinetti, K. Sakoda, and N. Koguchi
Phys. Stat. Sol. (B) 246, 861-863 (2009)
10. High resolution spectroscopy of self-assembled single GaAs/AlGaAs quantum dots
M. Abbarchi, C. Mastrandrea, T. Kuroda, A. Vinattieri, T. Mano, N. Koguchi, K. Sakoda, and M. Gurioli
Phys. Stat. Sol. (C) 6, 890-893 (2009).
11. Line broadening of excitonic complexes in self-assembled GaAs/AlGaAs single quantum dots
M. Abbarchi, C. Mastrandrea, T. Kuroda, A. Vinattieri, T. Mano, N. Koguchi, K. Sakoda, and M. Gurioli
Phys. Stat. Sol. (C) 6, 886-889 (2009).
12. Quantum dots to double concentric quantum ring structures transition
S. Bietti, C. Somaschini, M. Abbarchi, N. Koguchi, S. Sanguinetti, E. Poliani, M. Bonfanti, M. Gurioli, A. Vinattieri, T. Kuroda, T. Mano, and S. Sakoda
Phys. Stat. Sol. (C) 6, 928-931 (2009).
13. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy
T. Mano, M. Abbarchi, T. Kuroda, C. A. Mastrandrea, A. Vinattieri, S. Sanguinetti, K. Sakoda, and M. Gurioli
Nanotechnology 20, 395601 (2009)
14. Poissonian statistics of excitonic complexes in quantum dots
M. Abbarchi, C. Mastrandrea, T. Kuroda, T. Mano, A. Vinattieri, K. Sakoda, and M. Gurioli
J. Appl Phys. 106, 53504 (2009)
15. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field
Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, and K. Sakoda
Chinese Optics Lett. 7, 882-885 (2009)
16. Purcell effect of GaAs quantum dots by photonic crystal microcavities
K. Sakoda, T. Kuroda, N. Ikeda, T. Mano, Y. Sugimoto, T. Ochiai, K. Kuroda, S. Ohkouchi, N. Koguchi, and K. Asakawa
Chinese Optics Lett. 7, 879-881 (2009)
17. Growth of ZnO nanowires using ZnS substrates with Ga droplets
Q. Yang, M. Tanaka, T. Yasuda, and H. Tatsuoka
e-journal Surf. Sci. & Technol. 7, 25 (2009)
18. Observation of a new isoelectronic trap luminescence in nitorgen d-doped GaP
M. Ikezawa, Y. Sakuma, M. Watanabe, Y. Masumoto
Jpn. J. Appl. Phys. 48, 04C158 (2009).
19. Single NN pair luminescence and single photon generation in nitrogen d-doped GaP
M. Ikezawa, Y. Sakuma, M. Watanabe, Y. Masumoto
Phys. Stat. Sol. (c) 6, 362 (2009).
20. Anisotropic kinetics on growing Ge(001) surfaces
A. Ohtake, T. Yasuda, and N. Miyata
Surf. Sci. 603, 826 (2009)
21. High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy
T. Mano, T. Kuroda, K. Mitsuishi, T. Noda, and K. Sakoda
J. Crystal Growth 311, 1828 (2009)
22. Ordering of GaAs quantum dots by droplet epitaxy
T. Mano, T. Kuroda, T. Noda, and K. Sakoda
Phys. Stat. Sol. (B) 246, 729 (2009)
23. Photon antibunching in double quantum ring structures
M. Abbarchi, C. Mastrandrea, A. Vinattieri, S. Sanguinetti, T. Mano, T. Kuroda, N. Koguchi, K. Sakoda, and M. Gurioli
Phys. Rev. B 79, 85308 (2009)
2008
1. Telecom single-photon source with horn structure
K. Takemoto, S. Hirose, M. Takatsu, N. Yokoyama, Y. Sakuma, T. Usuki, T. Miyazawa, and Y. Arakawa
Phys. Stat. Sol. (c) 5, 2699 (2008).
2. Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes
Y. Irokawa, Y. Sakuma, T. Seikiguchi
Phys. Stat. Sol. (c) 5, 2985 (2008).
3. Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source
T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyo, J. Yanagisawa, A. Sakai,
Jpn. J. Appl. Phys. 47, 5018 (2008).
4. Isoelectronic nitrogen d-doping and single-photon emission from individual nitrogen pairs
Y. Sakuma, M. Ikezawa, M. Watanabe, Y. Masumoto
J. Crystal Growth 310, 4790 (2008).
5. InN growth by plasma-assisted molecular beam epitaxy with indium monolayer insertion
Yz. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno, M. Takeguchi,
Crystal Growth & Design 8, 1073 (2008).
6. Effect of annealing on Implanted Ga of Diamond-Like Carbon Thin Films
T. Nagata, Y. Sakuma, M. Haemori, K. Nakajima, R. Kometani, K. Kanda, S. Matsui, T. Chikyo
Jpn. J. Appl. Phys. 4, 9010 (2008).
7. Characterization of AlInGaN/GaN heterointerface by HAADF-STEM and electron holography
M. Takeguchi, H. Okuno, Y. Irokawa, Y. Sakuma, K. Furuya
Microscopy and Microanalysis 14, 438 (2008).
8. Influence of initial surface reconstruction on the interface structure of HfO2/GaAs(001)
T. Yasuda, N. Miyata, and A. Ohtake,
Appl. Surf. Sci. 254, 7565 (2008).
9. Surface Reconstructions of GaAs(001)
A. Ohtake
Surf. Sci. Rep. 63, 295 (2008)
10. Ge-induced (1x2) reconstruction on GaAs(001): A precursor to As segregation
A. Ohtake, J. Nara, T. Yasuda, and N. Miyata
Phys. Rev. B 77, 195309 (2008)
11. Wavelength dispersive X-ray spectroscopy of thick and thin samples for electron microscopes
M. Tanaka, M. Takeguchi and K. Furuya
Surf. Interface Anal. 40, 1684 (2008)
12. X-ray analysis and mapping by wavelength dispersive X-ray spectroscopy in an electron microscope
M. Tanaka, M. Takeguchi and K. Furuya
Ultramic. 108, 1427 (2008)
13. Development and Application of an Internet Electron Microscopy System for the Outreach Program in Japan
M. Tanaka, A. Tameike, N. Ishikawa and K. Furuya
Microsc. Microanal. 14, 176 (2008)
14. In-situ Observation of Reaction of Mn Atoms on Ge (001)-2x1 Substrates by Ultrahigh Vacuum Transmission Electron Microscopy
M. Tanaka and K. Furuya
AMTC Lett. 1, 244 (2008)
15. Interfacial Thermal Resistance of Au/SiO2 Produced by Sputtering Method
Y. B. Xu, M. Goto, Y. Tanaka, M. Tanaka, M. Shimono and M. Yamazaki
High Temperatures-High Pressures 37, 31 (2008)
16. Influence of Si/Fe ratio in multilayer structures on crystalline growth of beta-FeSi2 thin film on Si substrate
Z. Liu, M. Tanaka, R. Kuroda, M. Osamura and Y. Makita
Appl. phys. Lett. 93, 021907 (2008)
17. Bloch wave-based calculation of imaging properties of high-resolution scanning confocal electron microscopy
K. Mitsuishi, I. Iakoubovskii, M. Takeguchi, M. Shimojo, A. Hashimoto, K. Furuya
Ultramicroscopy　108, 981 (2008)
18. Structure and pressure inside Xe nanoparticles embedded in Al
K. Iakoubovskii, K. Mitsuishi, K. Furuya
Phys. Rev. B 78, 064105 (2008)
19. Thickness measurements with electron energy loss spectroscopy
K. Iakoubovskii, K. Mitsuishi, Y. Nakayama, K. Furuya
Microscopy Research and Technique 71, 626 (2008)
20. Mean free path of inelastic electron scattering in elemental solids and oxides using transmission electron microscopy: Atomic number dependent oscillatory behavior
K. Iakoubovskii, K. Mitsuishi, Y. Nakayama, K. Furuya
Phys. Rev. B 77, 104102 (2008)
21. High-resolution electron microscopy of detonation nanodiamond
K. Iakoubovskii, K. Mitsuishi, K. Furuya
Nanotechnology 19, 155705 (2008)
22. Bloch wave based analysis of imaging properties of high-resolution scanning electron micorscopy
K. Mitsuishi, I. Iakoubovskii, M. Takeguchi, M. Shimojo, A. Hashimoto, K. Furuya
AMTC Letters 1, 81 (2008)
23. Ouantitative structural analysis of twin boundary in alpaha-Zn7Sb2O12 using HAADF-STEM method 
K. Kuramochi, K. Suzuki, T. Yamazaki, K. Mitsuishi, K. Furuya, I Hashimoto, K. Watanabe
Ultramicorscopy 109, 96 (2008)
24. Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures
S. Sanguinetti, T. Mano, A. Gerosa, C. Somaschini, S. Bietti, N. Koguchi, E. Grilli, M. Guzzi, M. Gurioli, and M. Abbarchi
J. Appl. Phys. 104, 113519 (2008)
25. GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy
T. Mano, T. Kuroda, K. Mitsuishi, Y. Nakayama, T. Noda, and K. Sakoda
Appl. Phys. Lett. 93, 203110 (2008)
26. Structural properties of GaAs nanostructures formed by a supply of intense As4 flux in droplet epitaxy
T. Mano, K. Mitsuishi, Y. Nakayama, T. Noda, K. Sakoda
Appl. Surf. Sci. 254, 7770 (2009)
27. Phonon sideband recombination kinetics in single quantum dots
M. Abbarchi, M. Gurioli, A. Vinattieri, S. Sanguinetti, M. Bonfanti, T. Mano, K. Watanabe, T. Kuroda, and N. Koguchi
J. Appl. Phys. 104, 23504 (2008)
28. Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array
D. Sreenivasan, J. E. M. Haverkort, O. Ipek, B. Martinez-Vazquez, T. J. Eijkemans, T. Mano, and R. Notzel
Physica E 40, 1879 (2008)
29. Carrier dynamics in individual concentric quantum rings: Photoluminescence measurements
S. Sanguinetti, M. Abbarchi, A. Vinattieri, M. Zamfirescu, M. Gurioli, T. Mano, T. Kuroda, and N. Koguchi
Phys. Rev. B 77, 125404 (2008)
2007
1. An optical horn structure for single-photon source using quantum dots at telecommunication wavelength
K. Takemoto, M. Takatsu, S. Hirose, N. Yokoyama, Y. Sakuma, T. Usuki, T. Miyazawa, and Y. Arakawa
J. Appl. Phys. 101, 081720 (2007).
2. Single photon emission from individual nitrogen pairs in GaP
M. Ikezawa, Y. Sakuma, and Y. Masumoto
Jpn. J. Appl. Phys. 46, L871 (2007).
3. Scanning tunneling microscope study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method
Y. Akanuma, I. Yamakawa, Y. Sakuma, T. Usuki, and A. Nakamura
Appl. Phys. Lett. 90, 093112 (2007).
4. Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes
Y. Irokawa, Y. Sakuma, T. Seikiguchi
Jpn. J. Appl. Phys. 46, 7714 (2007).
5. GaN Film Fabrication by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition
T. Nagata, Y. Sakuma, T. Uehara, T. Chikyo
Jpn. J. Appl. Phys. 46, L43 (2007).
6. Radiative　recombination of excitons in disk-shaped　InAs/InP　quantum dots
S. Tomimoto, A. Kurokawa, Y. Sakuma, T. Usuki, and Y. Masumoto
Phys. Rev. B 76, 205317 (2007).
7. The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy
Yz. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi
J. Crystal Growth 301-302, 521 (2007).
8. Structure and composition of Ga-rich (6x6) reconstructions on GaAs(001)
A. Ohtake
Phys. Rev. B 75, 153302 (2007)
9. Electron-Beam-Induced Deposition of Fe Nanoparticles and Thin Films on SrTiO3 Substrates
M. Tanaka, K. Mitsuishi, M. Takeguchi, M. Shimojo, K. Furuya and N. Koguchi
Jpn. J. Appl. Phys. 46, 6243 (2007)
10. TEM observations of nanowires deposited on a self-assembled InAs quantum-ring structure
K. Mitsuishi, T. Noda, T. Mano, M. Tanaka, K. Furuya, N. Koguchi
Jpn. J. Appl. Phys 46, 6277 (2007)
11. Formation of InGaAs quantum disks using droplet lithography
T. Mano, T. Kuroda, T. Noda, K. Sakoda, and N. Koguchi
Jpn. J. Appl. Phys. 46, L736 (2007)
12. Deterministic nanometer-sized lead wiring by atomic force microscopy lithography
M. Yamagiwa, M. Kawabe, T. Mano, T. Noda, K. Takehana, and N. Koguchi
Jpn. J. Appl. Phys. 46, 2658 (2007)
13. Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties
T. Mano, T. Kuroda, K. Mitsuishi, M. Yamagiwa, X. J. Guo, K. Furuya, K. Sakoda, and N. Koguchi
J. Crystal Growth 301, 740 (2007)
14. High-resolution core-level photoemission study on GaAs(111)B surfaces
K. Nakamura, T. Mano, M. Oshima, H. W. Yeom, and K. Ono
J. Appl. Phys. 101, 43516 (2007)
2006
1. Single-photon generator for optical telecommunication wavelength
T. Usuki, Y. Sakuma, S. Hirose, K. Takemoto, N. Yokoyama, T. Miyazawa, M. Takatsu, and Y. Arakawa
J. Phys. Conference Series 38, 140 (2006).
2. Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique
H. Z. Song, T. Usuki, T. Ohshima, Y. Sakuma, M. Kawabe, Y. Okada, K. Takemoto, T. Miyazawa, S. Hirose, Y. Nakata, M. Takatsu, N. Yokoyama
Nanoscale Research Letters 1, 160 (2006).
3. Three-Dimensional GaN Nano Structure Fabrication by Focused Ion Beam Chemical Vapor Deposition
T. Nagata, A. Parhat, Y. Yamauchi, Y. Sakuma, T. Sekiguchi, and T. Chikyo,
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 242, 250 (2006).
4. Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metal-organic chemical vapor deposition
Yz. Yao, T. Sekiguchi, Y. Sakuma, M. Miyamura and Y. Arakawa
Scripta Materialia 55, 679 (2006).
5. Structure of the As-deficient phase on GaAs(001)-(2x4)
A. Ohtake
Phys. Rev. B 74, 165322 (2006)
6. Self-assembled growth of ordered GaAs nanostructures
A. Ohtake and N. Koguchi
Appl. Phys. Lett. 89, 083108 (2006)
7. Ga-rich GaAs(001) surface from ab-initio calculations: Atomic Structure of the (4x6) and (6x6) reconstructions
K. Seino, W. G. Schmidt, and A. Ohtake
Phys. Rev. B 73, 035317 (2006)
8. Atomic structure of Ga nanoclusters on Si(111)-(7x7)
A. Ohtake
Phys. Rev. B 73, 033301 (2006)
9. Formation of iron silicide nano-islands on Si substrates by metal organic chemical vapor deposition under electron beams
M. Tanaka, F. Chu, M. Shimojo, M. Takeguchi, K. Mitsuishi and K. Furuya
J. Mat. Sci. 41, 2667 (2006)
10. Formation of metal nano-wires on heat-treated substrates using an ultrahigh vacuum transmission electron microscope
M. Tanaka, T. Wagner, M. Takeguchi, M. Han, M. Shimojo, K. Mitsuishi and K. Furuya
Surf. Interface Anal. 38, 1568 (2006)
11. In situ observation of heteroepitaxial beta FeSi2 during electro-beam irradiation
M. Han, J.C. Bennett, Q. Zhang, M. Tanaka, M. Takeguchi and K. Furuya
Thin Solid Films 514, 58 (2006)
12. Proximity Effect in Electron-Beam-Induced Deposition
K. Mitsuishi, M. Shimojo, M. Takeguchi, M. Tanaka, K. Furuya
Jpn. J. Appl. Phys 45, 5517 (2006)
13. Nano-fabrication using electron-beam-induced deposition combined with low energy ion milling
K. Mitsuishi, M Shimojo, M. Tanaka, K. Furuya
Nuclear Inst&Method B 242, 244 (2006)
14. Dynamic Monte Carlo simulation on the electron-beam-induced deposition of carbon, silver, and tungsten supertips
Z.Q. Liu, K.Mitsuishi, K. Furuya
Microscopy and Microanalysis 12, 549 (2006)
15. Electron-diffraction study on is an element of-iron nitride powders with various nitrogen contents: Variation of long-range nitrogen ordering
Liu, ZQ, Leineweber, A, Mittemeijer, EJ, Mitsuishi, K, Furuya, K
J. Mat. Res. 21, 2572 (2006)
16. Crystallization of focused-electron-beam deposited tungsten wire on molybdenum substrate
Z.Q. Liu, K.Mitsuishi, K. Furuya
Jpn. J. Appl. Phys. 45, 5548 (2006)
17. Monte Carlo study of the in situ growth of a substance deposited using electron-beam-induced deposition
Z. Q. Liu, A. Leineweber, K. Mitsuishi, K. Furuya
Nanotechnology 17, 3832 (2006)
18. Transmission electron microscopy study on the superstructure and the precipitation of gamma '-Fe4N in initially homogeneous epsilon-iron nitride powders
T. Ochiai and K. Sakoda
J. Mat. Sci 41, 2673 (2006)
19. Circular dichroism in InAs/GaAs quantum dots: Confinement-induced magnetism
E. W. Bogaart, J. E. M. Haverkort, T. Mano, T. van Lippen, G. J. Hamhuis, and R. Notzel
Phys. Rev. B 74, 153307 (2006)
20. Coupled quantum nanostructures formed by droplet epitaxy
T. Mano, T. Kuroda, M. Yamagiwa, G. Kido, K. Sakoda, and N. Koguchi
Appl. Phys. Lett. 89, 183102 (2006)
21. Coupled quantum nanostructures formed by droplet epitaxy
T. Mano, T. Noda, M. Yamagiwa, and N. Koguchi
Thin Solid Films 515, 531 (2006)
22. Self-assembly of laterally aligned GaAs quantum dot pairs
M. Yamagiwa, T. Mano, T. Kuroda, T. Tateno, K. Sakoda, N. Koguchi, and F. Minami
Appl. Phys. Lett. 89, 113115 (2006)
23. Carrier capture and relaxation through a continuum background in InAs quantum dots
E. W. Bogaart, J. E. M. Haverkort, T. Mano, R. Notzel, and J. H. Wolter
Physica E 32, 163 (2006)
2005
1. GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition
T. Nagata, A. Parhat, Y. Sakuma, T. Sekiguchi, and T. Chikyo
Appl. Phys. Lett. 87, 013103 (2005).
2. Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2
Y. Xiaoli, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Itoh
Appl. Phys. Lett. 86, 162102 (2005).
3. Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots
H. Z. Song, T. Usuki, S. Hirose, K. Takemoto, Y. Nakata, N. Yokoyama, Y. Sakuma
Appl. Phys. Lett. 86, 113118 (2005).
4. Single-photon generation in the 1.55μm optical-fiber band from an InAs/InP quantum dot
T. Miyazawa, K. Takemoto, Y. Sakuma, S. Hirose, T. Usuki, N. Yokoyama, M Takatsu, Y. Arakawa
Jpn. J. Appl. Phys. Part2-Lett.& Express Lett. 44, L620 (2005).
5. Role of thin cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001)
Y. Sakuma, M. Takeguchi, K. Takemoto, S. Hirose, T. Usuki, N. Yokoyama
J. Vac. Sci. & Technol. Vol. B23, 1741 (2005).
6. Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD
Y. Sakuma, K. Takemoto, S. Hirose, T. Usuki, N. Yokoyama
Physica E-Low-dimensional Systems & Nanostructures 26, 81 (2005).
7. Single InAs/InP Quantum Dot Spectroscopy in 1.3-1.55μm Telecommunication Band
K. Takemoto, Y. Sakuma, S. Hirose, T. Usuki, N. Yokoyama, T. Miyazawa, M. Takatsu, and Y. Arakawa
Physica E-Low-dimensional Systems & Nanostructures, 26, 185 (2005).
8. Position- and Size- Controlled Fabrication of Iron Silicide Nanorods by Electron-Beam-Induced Deposition Using an Ultrahigh-Vacuum transmission electron micorsocpe
M. Tanaka, F. Chu, M. Shimojo, M. Takeguchi, K. Mitsuishi and K. Furuya
Appl. Phys. Lett. 86, 183104 (2005)
9. Formation of iron nano-dots by electron beam induced deposition using an ultrahigh vacuum transmission electron microscope
M. Tanaka, M. Han, M. Takeguchi, F. Chu, M. Shimojo, K. Mitsuishi, and K. Furuya
Jpn. J. Appl. Phys. 44, 5635 (2005)
10. Ultimate sized nano-dots formed by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope
M. Tanaka, M. Shimojo, M. Han, K. Mitsuishi and K. Furuya
Surf. Interface Anal. 37, 261 (2005)
11. Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope
M. Tanaka, M. Shimojo, K. Mitsuishi, M. Takeguchi and K. Furuya
J. Cryst. Growth, 275, e2361 (2005)
12. Gold Seeds Arrangement on a Nanoporous Anodic Aluminum Oxide Membrane by Centrifugal Force
F. Chu, M. Tanaka, M. Shimojo, K. Furuya and K. Kajikawa
Jpn. J. Appl. Phys. 44, 5847 (2005)
13. Preparation of Spherical Particles with Quartz Single Crystal
M. Okabayashi, K. Miyazaki, T. Kono, M. Tanaka and Y. Toda
Chemistry Lett. 34, 58 (2005)
14. Nano-dot and nano-rod formation in electron beam induced deposition using iron carbonyl
M. Shimojo, W. Zhang, M. Takeguchi, M. Tanaka, K. Mitsuishi and K. Furuya
Jpn. J. Appl. Phys. 44, 5651 (2005)
15. TEM sample preparation using new nano-fabrication technique combining electron-beam-induced deposition and low energy ion milling
K. Mitsuishi, M. Shimojo, M. Tanaka, M. Takeguchi, M. Song, K. Furuya
Micros. Micoranal. 12, 545 (2005)
16. Ultrahigh-vacuum third-order spherical aberration (Cs) corrector for a scanning transmission electron microscope
K. Mitsuishi, M. Takeguchi, Y. Kondo, F. Hosokawa, K. Okamoto, T Sannomiya, M. Hori, T. Iwama, M. Kawazoe, K. Furuya
Micros. Microanal. 12, 456 (2005)
17. Dynamic profile calculation of deposition resolution by high-energy electrons in electron-beam-induced deposition
K. Mitsuishi, Z. Q. Liu, M. Shimojo, M. Han, K. Furuya
Ultramicrosocpy 103, 17 (2005)
18. Resolution in new nanofabrication technique combining electron-beam-induced deposition and low-energy ion milling,
K. Mitsuishi, M. Shimojo, M. Tanaka, M, Takeguchi, K. Furuya
Jpn. J. Appl. Phys. 44, 5627 (2005)
19. Nanofabrication of tungsten supertip by electron-beam-induced deposition
Z.Q. Liu, K.Mitsuishi, K. Furuya
Physica E 29, 702 (2005).
20. Modeling the process of electron-beam-induced deposition by dynamic Monte Carlo simulation
Z.Q. Liu, K.Mitsuishi, K. Furuya
Jpn. J. Appl. Phys. 44, 5659 (2005)
21. Nanoparticles in interlayers of Bi2O3-doped ZnO ceramics
T. Yamazaki, H. Yamada, K. Watanabe, K. Mitsuishi, Y. Toda, K. Furuya, I. Hashimoto
Surf. Sci. 583, 166, (2005)
22. Transmission electron microscopy investigation on the electron-stimulated oxidation of iron nitrides by 2-MeV electron irradiation
A. Q. Liu, H. Hashimoto, T. Sakata, H. Mori, M. Song, K. Mitsuishi, K. Furuya
J. Mat. Res. 20, 1918 (2005)
23. Three-dimensional nanofabrication by electron-beam-induced deposition using 200-keV electrons in scanning transmission electron microscope
Z.Q. Liu, K.Mitsuishi, K. Furuya
Appl. Phys. A 80, 1437 (2005)
24. Role of the continuum background for carrier relaxation in InAs quantum dots
E. W. Bogaart, J. E. M. Haverkort, T. Mano, T. van Lippen, R. Notzel, and J. H. Wolter
Phys. Rev. B 72, 195301 (2005)
25. Quantum dot decoherence measured by ensemble photoluminescence
M. Gurioli, S. Sanguinetti, T. Mano, N. Koguchi, and R. Notzel
J. Appl. Phys. 98, 103527 (2005)
26. Dichroic reflection of InAs/GaAs quantum dots
E. W. Bogaart, J. E. M. Haverkort, T. J.. Eijkemans, T. Mano, R. Notzel, and J. H. Wolter
J. Appl. Phys. 98, 73519 (2005)
27. Temperature-dependent photoluminescence of self-assembled (In,Ga)As quantum dots on GaAs (100): Carrier redistribution through low-energy continuous states
T. Mano, R. Notzel, Q. Gong, T. van Lippen, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter
Jpn. J. Appl. Phys. 44, 6829 (2005)
28. Nanometer-scale GaAs ring structure grown by droplet epitaxy
T. Mano and N. Koguchi
J. Crystal Growth 278, 108 (2005)
29. Self-assembly of concentric quantum double rings
T. Mano, T. Kuroda, S. Sanuginetti, T. Ochiai, T. Tateno, J. S. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, and N. Koguchi
Nano Letters 5, 425 (2005)
30. Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates
T. Mano, R. Notzel, D. Zhou, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter
J. Appl. Phys. 97, 14304 (2005)


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