Surface structure analyzer system MBE + RHEED + XPS + STM + XRD

MOCVD system for As and P based materials

MOCVD system for nitrogen based materials

Aberration Corrected　Scanning Transmission Electron Microscpe This microscope equiped with 3rd order spherical aberation corrector so that it is possible to get the focused probe down to 0.1nm.

Molecular beam epitaxy system for oxide- and nitride- semiconductors. Sources: Zn, Mg, O-plasma, N-Plasma, Ga

Molecular beam epitaxy system for III-Arsenide semiconductors. Sources: Al, Ga, In, As, Si, atomic-H

Mask aligner

Wire bonder

Photoluminescence measurement system Lasers: 532 nm Nd-YAG laser (40 mW), 633 nm He-Ne laser (1mW), 325 nm He-Cd laser (20mW), Detectors: CCD camera (ANDOR), GaAs photomutiplier tube, InGaAs photomutiplier tube, Cryostat: Closed cycle cryostat (5 K-RT)

High-resolution scanning electron microscope

Atomic force microscope for lithography

Atomic force microscope