1. Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy

Physica E 42, 2742 (2010).

1. Growth of GaSb dots on GaAs (100) by droplet epitaxy

T. Kawazu, T. Mano, T. Noda, Y. Akiyama, and H. Sakaki
Phys. Stat. Sol. (b) 246, 733 (2009)

2. Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (100) by droplet epitaxy

T. Noda, T. Mano, T. Kuroda, K. Sakoda, H. Sakaki,
J. Crystal Growth, 311, 1836 (2009).

1. Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current

T. Kawazu and H. Sakaki
Phys. Stat. Sol. (c) 5, 2879 (2008)

2. Anisotropic transport of electrons and holes in thin GaAs/AlAs quantum wells grown on (311)A GaAs substrates.

T. Noda, and H. Sakaki
Physica E, .40, 2116 (2008).

3. Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy

Takeshi Noda, Takaaki Mano
Appl. Surf. Sci. 254 777 (2008).

1. Fabrication of Al nanoparticles and their electrical properties studied by capacitance-voltage measurements.

T. Noda, T. Mano, and N. Koguchi
Appl. Surf. Sci. 252, 5408 (2006)

2. Current-voltage characteristics in double-barrier resonant tunneling diodes with embedded GaAs quantum rings.

T. Noda and N. Koguchi
Physica E 32, 550-553 (2006)