An optical spectroscopy insight into open problems in Laser-assisted Atom Probe Tomography of semiconductors
Dr. Lorenzo Rigutti
Date & Time: 10:30 - 11:30, July 28th (Fri), 2017.
Place: 8F Medium Seminar Room(#811-812), Sengen.
Abstract:
Laser-assisted Atom Probe Tomography (La-APT) allows for 3D analysis of nanoscale volumes of complex semiconductor structures with (potentially) sub-nanometer spatial resolution and ppm chemical sensitivity. However, many problems are still open and concern both practical aspects of the technique and fundamental mechanisms of high-field surface physics. In this contribution I will illustrate some important metrological problems related to La-APT compositional measurements in semiconductors, and show how they can be partly resolved thanks to a correlative approach involving micro-photoluminescence spectroscopy (μ-PL), high-resolution scanning transmission electron microscopy (HR-STEM) and La-APT [1-4]. Such methods not only can shed light on the structure-function properties of these nanoscale systems, but also enable a better interpretation of APT results within its limitations [3,5]. Finally, I will show that the study of µ-PL in situ in an atom probe applied to diamond or oxides nanostructures allows for a deeper insight into the field/stress relationship within APT specimens.
[1] L. Rigutti et al., Nano Letters (2014), 14, 107–114.
[2] L. Mancini et al. Appl. Phys. Lett. (2016), 108, 042102.
[3] L. Rigutti et al. J. Appl. Phys. (2016) 119, 105704.
[4] L. Mancini et al., Nano Letters (2017).
[5] L. Mancini et al. J. Phys. Chem. C (2014) 118, 24136-24151.
[1] L. Rigutti et al., Nano Letters (2014), 14, 107–114.
[2] L. Mancini et al. Appl. Phys. Lett. (2016), 108, 042102.
[3] L. Rigutti et al. J. Appl. Phys. (2016) 119, 105704.
[4] L. Mancini et al., Nano Letters (2017).
[5] L. Mancini et al. J. Phys. Chem. C (2014) 118, 24136-24151.