Spintronics using Fe4N thin films with negative spin polarization
Dr. Shinji Isogami
Fukushima National College of Technology.
Date & Time: 15:00 - 16:00, January 21st (Thu), 2016.
Place: 8F Medium Seminar Room(#811-812), Sengen
Abstract:
Fe4N ferromagnetic materials with γ’ phase exhibit the negative spin polarization, therefore, inverse properties in spintronics devices using the Fe4N can be expected. At the first topic of the seminar, the recent experimental results concerning anisotropic magnetic damping in the Fe4N film will be presented. While the anisotropic damping at room temperature is a well-known phenomenon, inversion of the anisotropy was observed less than 180 K. The second topic is the spin pumping effect in the Fe4N/Pt bilayer film. Estimating the spin mixing conductance value from the invers spin-Hall voltage, one order enhanced value was achieved compared with NiFe/Pt and Fe/Pt systems. The mechanisms involved can be attributed to the crystal growth with (001) textures at the interface and/or the 3d minority spin conduction in the Fe4N layer.