The 198th Special MMU seminar

The 198th Special MMU seminar

Progress of STT-MRAM Technology, the effect on low-power memory systems, and issues for scalability

Dr. Hiroaki Yoda Center for Semiconductor Research & Development, Toshiba Corporation

Date: August 7(Thu), 2014
Time: 15:30 - 16:30
Place: 8th floor room 801-802(特別応接室), Sengen

Intensive works on Perpendicular-MTJs(P-MTJ) overcame the major obstacle of large write current. The P-MTJ reduce the current to the order of 30 micro-amperes. Electric charge neccesary for writing is also reduced to below 100fC/bit. MR is improved to over 200% as well. As a result, P-MTJs opend not only the way to giga-bits density for STT-MRAMs but also the way to ultra-low-power consumption memory systems called ormally-off systems. However, there are many issues for scaling below 20nm nodes which most of reserchers do not recognize. The first half of this seminar covers the progress of STT-technoloty and the second half covers the issues for scaling.