Major Facilities

 UHV sputtering deposition system which has two sputtering chambers connected by the transfer chamber. Maximum 18 source can be deposited without air exposure in this system. High quality giant magnetoresistive device made by this system successfully realized the highest record of magnetoresistive property in the world.

 The electron beam lithography, which focus the highly accelerated electron and draw nano-scale pattern on resists, is an indispensable tool for testing new spintronics materials in actual device scale. Our equipment, JBX-6300 SM, can easily draw wire patterns down to 7 nm in width, due to the benefit of the highly acceleration voltage upto 100 kV. Fine correction functions enables semi-automatic exposure with high accuracy.

 Titan G2 80-200 S/TEM(FEI) can be operated at 80-200 kV. Cs correction make electron probe much smaller, and it enables the microscope to get a higher-resolution(below 0.08nm). The microscope also support chemical analysis such as EELS(Electron Energy-Loss Spectroscopy), EDS(Energy Dispersive x-ray Spectroscopy) with atomic level resolution.

 FIB(Focused Ion Beam) and SEM(Scanning Electron Microscope) combined system with cryo-stage. Preparation of TEM/3DAP samples at low temperature(~around 100K) is available in the machine. In addition, it supports automated FIB fabrication and SEM observation by using Python-based API. Also, transferring 3DAP samples between FIB-SEM and 3DAP machine kept at low temperature and without air exposure is possible by using VCTM(Vacuum and Cryo Transfer Module).

 FIB(Focused Ion Beam) and SEM(Scanning Electron Microscope) combined system with a femtosecond laser. Large ROI can be milled by the femtosecond laser, then finely polished by the FIB and observed by SEM. It also supports EDS(Energy Dispersive x-ray Spectroscopy). In addition, preparation of TEM and 3DAP samples by standard lift-out method is possible.

 FIB(Focused Ion Beam) and SEM(Scanning Electron Microscope) combined system. In the system, SEM observation, preparation of TEM and 3DAP samples by standard lift-out method are possible. In addition, it supports EDS(Energy Dispersive x-ray Spectroscopy) and EBSD(Electron BackScatter Diffraction) analysis.

  The LEAP5000XS is a high performance atom probe microscope which provides nano-scale surface, bulk and interfacial materials analysis of simple and complex structures with atom-by-atom identification and accurate spatial positioning. The system works using the principle of field evaporation, whereby a strong electric field applied to the specimen is sufficient to cause removal of atoms by ionization. Atom removal is triggered either via a voltage or laser pulse applied to the sample. (from the CAMECA's website.)

 Three-dimensional Atom Probe assisted with femtosecond laser pulse. It can analyze wide variety of materials including metals, semiconductors and their devices, ceramics. With shorter flight distance(~12cm), a large angle of view can be achived.
 In addition, the development of the microfabrication method using FIB technique makes site specific atomprobe specimen preparation possible, such as grain boundaries, specific region of devices.