Site engineering via doping, a well-known technique in bulk materials, is now useful for designing high-k properties of individual nanocrystals. In one-nanometer-thick TiO₂-based nanosheets, the distrotion induced by Nb doping results in large permittivity (ε_r =320) and simultaneously stabilizes their dielectric response in a ultrathin form (< 10 nm), contrasting to current high-k films. Our work provides a new recipe for designing nanodielectrics desirable for future capacitor and memory devices.

Minoru Osada¹,Takayoshi Sasaki¹