Tsuyoshi Hasegawa

Tsuyoshi Hasegawa
Affiliation:
Specialty:
Nano-devices
Academic degree:
Ph.D. (science), Tokyo Institute of Technology (1996)
Home Page:

Education & Research History

2006 Group Leader, National Institute for Materials Science (NIMS)
2003 Associate Director, NIMS
2002 Senior Researcher, NIMS
1999 Senior Research Scientist, The Institute of Chemical and Physical Research (RIKEN)
1997 Senior Researcher, Central Research Laboratory, Hitachi Ltd.
1996 Ph. D. in Physics, Tokyo Institute of Technology
1987 Researcher, Central Research Laboratory, Hitachi Ltd.

Research Career

He has been working on the surface science and the electronic devices. As a researcher of HCRL, he achieved atomic manipulation at room temperature using a scanning tunneling microscope (STM) to write atomic words, 'Peace 91 HCRL', for praying peace against Gulf Crisis. This was the first experiment in the world of manipulating a single atom in the surface layer. He also succeeded in dynamic observation of Si crystal growth with atomic resolution using STM. For carrying out these experiments, he developed original STMs with his coworkers. In Hitachi, he also worked on development of electronic devices, such as DRAM and Logic Devices. He developed a multi-probe STM combined with a scanning electron microscope (SEM) for failure analysis of the devices. His instrument has enabled direct measurement of a single semiconductor transistor formed on a chip, which drastically shortens the Turn Around Time (TAT) of the device development.

After moving to RIKEN, he returned to a fundamental research field, and started to develop multi-probe atomic force microscope combined with SEM. By using the instruments, he succeeded in observing switching phenomenon of nano-ionics device developed with his colleagues. The device is named Atomic Switch. He also succeeded in forming basic logic circuits using Atomic Switch. These successful experimental results and good enough performance of the device has been reported by NATURE in 2005. Collaboration with an electrical company has started to make practical device, which is expected to be commercially available in five years. He has conducted the research group of the Atomic Switch since 2003, with a supervision of Prof. Aono.

Selected Papers

  1. Quantized conductance atomic switch
    Terabe K, Hasegawa T, Nakayama T, Aono M
    Nature, 2005; 433, 47-50.
  2. A nonvolatile programmable solid-electrolyte nanometer switch
    Kaeriyama S, Sakamoto T, Sunamura H, Mizuno M, Kawaura H, Hasegawa T, Terabe K, Nakayama T, Aono M, Hasegawa T
    IEEE J. Solid-State Circuits, 2005; 40(1): 168-176.
  3. Ionic-electronic conductor nanostructures: Template-confined growth and nonlinear electrical transport
    Liang CH, Terabe K, Hasegawa T, Negishi R, Tamura T, Aono M
    Small, 2005; 1(10): 971-975.
  4. Switching property of atomic switch controlled by solid electrochemical reaction
    Tamura T, Hasegawa T, Terabe K, Nakayama T, Sakamoto T, Sunamura H, Kawaura H, Hosaka S, Aono M
    Jpn J Appl Phys, 2006; 45(12): L364-L366.
  5. Effect on ion diffusion on switching voltage of solid-electrolyte nanometer switch
    Banno N, Sakamoto T, Hasegawa T, Terabe K, Aono M, Takata K
    Jpn J Appl Phys, 2006; 45(4B): 3666-3668.
  6. Effect of sulfurization conditions and post annealing treatment on the structural and electrical properties of silver sulfide films
    Kundu M, Terabe K, Hasegawa T, Aono M
    J Appl Phys, 2006; 99(10): 103501.
  7. Electric transport in Ta2O5 resistive switch
    Sakamoto T, Lister K, Banno N, Hasegawa T, Terabe K, Aono M
    Appl Phys Lett, 2007; 91(9): 092110.
  8. AgI/Ag heterojunction nanowires: Facile electrochemical synthesis, photoluminescence, and enhanced ionic conductivity
    Liang CH, Terabe K, Tsuruoka T, Osada M, Hasegawa T, Aono M
    Adv Funct Mater, 2007; 17(9): 1466.
  9. Chain polymerization of diacetylene compound multilayer films on the topmost surface initiated by scanning tunneling microscope tip
    Takajo D, Okawa Y, Hasegawa T, Aono M
    Langmuir, 2007; 23(10): 5247-5250.
  10. Resistance switching of an individual Ag2S/Ag nanowire heterostructure
    Liang CH, Terabe K, Hasegawa T, Aono M
    Nanotechnology, 2007; 18(45): 485202.