Original Papers (2006)
- Sakaguchi, I; Ryoken, H; Nakagawa, T; Sato, Y; Haneda, H ,
"Luminescence properties of Cu-ion-implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition"
SURFACE AND INTERFACE ANALYSIS, 38(1) 1-5 JAN(2006)
DOI: 10.1002/sia.2124
- Sano, S; Saito, N; Matsuda, S; Ohashi, N; Haneda, H; Arita, Y; Takemoto, M;
"Synthesis of high density and transparent forsterite ceramics using nano-sized precursors and their dielectric properties"
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 89(2) 568-574 FEB(2006)
DOI: 10.1111/j.1551-2916.2005.00766.x
- Ryoken, H; Ohashi, N; Sakaguchi, I; Adachi, Y; Hishita, S; Haneda, H;
"Structures and properties of (Zn,Mg)O films studied from the aspect of phase equilibria"
JOURNAL OF CRYSTAL GROWTH, 287(1) 134-138 JAN 18(2006)
DOI:10.1016/j.jcrysgro.2005.10.056
- Amagai, J; Kato, Y; Ueki, A; Saito, N; Ohashi, N; Haneda, H
"Synthesis of (Ba,Ca)(Zr,Ti)O3 ceramics from ultra-fine precursors"
ELECTROCERAMICS IN JAPAN VIII, 301 235-238 (2005), KEY ENGINEERING MATERIALS
- Ohgaki, T; Sugimura, S; Ryoken, H; Ohashi, N; Sakaguchi, I; Sekiguchi, T; Haneda, H
"Interfacial structure of GaN and InN thin films grown on ZnO substrates"
ELECTROCERAMICS IN JAPAN VIII, 301 79-82 (2005), KEY ENGINEERING MATERIALS
- Ryoken, H; Sakaguchi, I; Ohgaki, T; Adachi, Y; Takenaka, T; Ohashi, N; Haneda, H
"Effect of Al-doping into zinc oxide films prepared by pulsed laser deposition method with various oxidation assists"
ELECTROCERAMICS IN JAPAN VIII, 301 75-78 (2005), KEY ENGINEERING MATERIALS
- Xie, RG; Sekiguchi, T; Ishigaki, T; Ohashi, N; Li, DS; Yang, DR; Liu, BD; Bando, YS
"Enhancement and patterning of ultraviolet emission in ZnO with an electron beam"
APPLIED PHYSICS LETTERS, 88(13) Art. No. 134103 MAR 27(2006)
DOI:10.1063/1.2189200
- Ishigaki, T; Ohashi, N; Taguchi, H; Ye, RB; Haneda, H; Ito, S
"Improved UV emission of zinc oxide through hyrogen doping in pulse-modulated high-power ICP"
THIN SOLID FILMS, 506 303-306 MAY 26 (2006)
DOI:10.1016/j.tsf.2005.08.270
- Sakaguchi, I; Ryoken, H; Hishita, S; Haneda, H
"Characterization of ZnO thin film deposited by electron cyclotron resonance plasma-assisted chemical vapor deposition"
THIN SOLID FILMS, 506 184-187 MAY 26(2006)
DOI:10.1016/j.tsf.2005.08.021
- Yokoyama, S; Takahashi, K; Okamoto, S; Nagai, A; Minamidate, J; Saito, K; Ohashi, N; Haneda, H; Sakata, O; Kimura, S; Nishida, K; Katoda, T; Funakubo, H
"Preparation and structural analysis of micro-patterned Pb(Zr,Ti)O3 film by metalorganic chemical vapor deposition"
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(6A) 5102-5106 JUN(2006)
DOI:10.1143/JJAP.45.5102
- Cross, JS; Kurihara, K; Sakaguchi, I; Haneda, H
"Hydrogen-implant-induced polarization loss and recovery in IrO2/Pb(Zr,Ti)O3/Pt capacitors"
JOURNAL OF APPLIED PHYSICS, 99(12) Art. No. 124105 JUN 15(2006)
DOI:10.1063/1.2200477
- Ohgaki, T; Ohashi, N; Haneda, H; Yasumori, A
"Molecular beam epitaxy growth of indium nitride films on c-face zinc oxide substrates"
JOURNAL OF CRYSTAL GROWTH, 292(1) 33-39 JUN 15(2006)
DOI:10.1016/j.jcrysgro.2006.03.056
- Wang, YG; Ohashi, N; Wada, Y; Sakaguchi, I; Ohgaki, T; Haneda, H
"Lowering of stimulated emission threshold of zinc oxide by doping with thermally diffused aluminum supplied from sapphire substrate"
JOURNAL OF APPLIED PHYSICS, 100(2) Art. No. 023524 JUL 15(2006)
DOI: 10.1063/1.2209884
- Haneda, H;Ohgaki, T; Sakaguch, I; Ryoken, H; Ohashi, N;Yasumori, A
"SIMS analysis of impurities and nitrogen isotopes in galliumnitride thin films",
Applied Surface Science 252 7265?7268 (2006)
DOI:10.1016/j.apsusc.2006.02.179
- Tanaka, H; Kurihara, M; Xu, J.-Y; Ohashi,N; Maruyama, S; Moriyoshi,Y; Ishigaki,T
"Influence of Ar-H2-SF6 thermal plasma treatment of MCMB powders on the anode properties of a lithium ion rechargeable battery",
Thin Solid Films 506-507 311-315 (2006)
DOI:10.1016/j.tsf.2005.08.127
- Bosak, A; Serrano, J; Krisch, M; Watanabe, K; Taniguchi, T; Kanda, H,
"Elasticity of hexagonal boron nitride:Inelastic x-ray scattering measurements"
PHYSICAL REVIEW B, 73(4) Art. No. 041402 Jan....(2006)
DOI:10.1103/PhysRevB.73.041402
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