OSHIMA Yuichi
Education
1997 Bachelor's degree in Engineering from Tohoku University
1999 Master of Engineering from Tohoku University
2007 Doctor of Engineering from Tohoku University
Occupation
1999-2011 Researcher, R&D Laboratory, Hitachi-Cable Ltd.
2011-2017 Senior Researcher, National Institute for Materials Science
2018- Present Principal Researcher, National Institute for Materials Science
Membership of Professional Societies
2006-2008 Executive committee member,
Division of Solid State Physics and Applications, Japan Society of Applied Physics
2008-2020 Executive committee member,
Division of Crystals Science and Technology, Japan Society of Applied Physics
2017-2020 Representative, Japan Society of Applied Physics
2020 Advisor,
Division of Crystals Science and Technology, Japan Society of Applied Physics
2003 Young-Researcher Lecture Award (The Japan Society of Applied Physics)
"Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation"
2005 JJAP Young Scientist Award (JSAP Outstanding Paper Award)
"Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation"
2009 The Young Scientists' Prize (The Commendation for Science and Technology by the Minister of Education,Culture, Sports, Science and Technology)
"Development of the Fabrication Technology of large-scale high-quality Freestanding GaN Wafers through Hydride Vapor Phase Epitaxy with Void-Assisted Separation"
2011 Ichimura Industrial award
"Development of Mass-production technology of Large-diameter and uniform freestanding GaN wafers"
Original Papers
In-plane orientation control of (001) of κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
Y. Oshima, Katsuaki Kawara, Takayoshi Oshima, Takashi Shinohe
Jpn. J. Appl. Phys.59 (2020) 115501
Elimination of threading dislocations in α-Ga2O3 by double-layered epitaxial lateral overgrowth
Katsuaki Kawara,Y. Oshima,Mitsuru Okigawa, Takashi Shinohe
Appl. Phys. Express 13 (2020) 075507
Rapid Growth of α-Ga2O3 by HCl-Boosted Halide Vapor Phase Epitaxy and Effect of Precursor Supply Conditions on Crystal Properties
Y. Oshima, K. Kawara, T. Oshima, M. Okigawa, T. Shinohe
Semicond. Sci. Technol.35 (2020) 055022
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Y. Oshima, K. Kawara, T. Oshima, M. Okigawa, T. Shinohe
Jpn. J. Appl. Phys. 59 (2020) 025512
Chlorine-based inductive coupled plasma etching of α-Ga2O3
Z. A. Jian, Y. Oshima, S. Wright, K. Owen, E. Ahmadi
Semicond. Sci. Technol. 34 (2019) 035006
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, S. Fujita
APL Materials 7 (2019) 022503
Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Y. Oshima, E. Ahmadi, S. Kaun, F. Wu, J. S Speck
Semicond. Sci. Technol. 33 (2018) 015013
n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy
S. H. Han, A. Mazue, E. Ahmadi, T. Mates, Y. Oshima, J. S. Speck
Semicond. Sci. Technol. 33 (2018) 045001
Phonon Lifetime Observation in Epitaxial ScN Film with Inelastic X-Ray Scattering Spectroscopy
H. Uchiyama, Y. Oshima, R. Patterson, S. Iwamoto, J. Shiomi, K. Shimamura
Phys. Rev. Lett. 120 (2018) 235901
Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy
E. Ahmadi, Y. Oshima, F. Wu, J. S Speck
Semicond. Sci. Technol. 32 (2017) 035004
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
E. Ahmadi, O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, J. S. Speck
Appl. Phys. Express 10 (2017) 041102
Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
E. Ahmadi, O. S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U. K. Mishra, J. S. Speck
Appl. Phys. Express 10 (2017) 071101
Cathodoluminescence study on the impurity behaviors at threading dislocations in GaN
J. Wang, Y. Oshima, Y. Cho, T. Sekiguchi
Superlattices and Microstructures 99 (2016) 77
Composition determination of β-(AlxGa1-x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction
Y. Oshima, E. Ahmadi, S. C. Badescu, F. Wu, J. S. Speck
Appl. Phys. Express 9 (2016) 061102
Chlorine-based dry etching of β-Ga2O3
J. E. Hogan, S. W. Kaun, E. Ahmadi, Y. Oshima and J. S. Speck
J. Appl. Phys. 118 (2015) 085301
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
Y. Oshima, E. G. Villora, Y. Matsushita, S.Yamamoto, K. Shimamura
J. Appl. Phys. 118 (2015) 085301
Thermal and piezoelectric properties of La3Ta0.5Ga5.1Al0.4O14 (LTGA) for high temperature sensors
X. Fu, E. G. Villora, Y. Oshima, K. Shimamura, N. Ohashi
J. Alloys Compd. 647 (2015) 1086
Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates
Y. Oshima, E. G. Villora, K. Shimamura
Appl. Phys. Express 8 (2015) 055501
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by halide vapor phase epitaxy
Y. Oshima, E. G. Villora, K. Shimamura
Journal of Crystal Growth 410 (2015) pp.53-58
Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers
Y. Oshima, E. G. Villora, K. Shimamura
J. Appl. Phys. 115 (2014) 153508
Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
H. Fujikura, Y. Oshima, T. Megro, T. Saito
Journal of Crystal Growth 350 (2012) 38
Properties of Ge-doped, High-quality Bulk GaN Crystals Fabricated by Hydride Vapor Phase Epitaxy
Y. Oshima, T. Yoshida, K. Watanabe, T. Mishima
Journal of Crystal Growth 312 (2010) pp.3569-3573
Ultrahigh-Speed Growth of GaN by Hydride Vapor Phase Epitaxy
T. Yoshida, Y. Oshima, K. Watanabe, T. Tsuchiya, and T. Mishima
phys. stat. sol. (c) 8 (2010) pp.2110-2112
Fabrication of 3-inch Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy
T. Yoshida, Y. Oshima, T. Eri, K. Watanabe, M. Shibata and T. Mishima
phys. stat. sol. (a) 205 (2008) pp.1053-1055
Preparation of 3-inch Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy
T. Yoshida, Y. Oshima, T. Eri, K. Ikeda, S. Yamamoto, K. Watanabe, M. Shibata, T. Mishima
Journal of Crystal Growth 310 (2008)pp.5-7
Thermal and Electrical Properties of High-quality Freestanding GaN Wafers with high carrier concentration
Y. Oshima, T. Yoshida, T. Eri, M. Shibata and T. Mishima
Jpn. J. Appl. Phys. 45 (2006) pp.7685-7687
Thermal and Optical Properties of Bulk GaN Crystals Fabricated through Hydride Vapor Phase Epitaxy with Void-Assisted Separation
Y. Oshima, T. Suzuki, T. Eri, Y. Kawaguchi, K. Watanabe, M. Shibata and T. Mishima
J. Appl. Phys. 98 (2005) 103509
Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, K. Kobayashi, T. Ichihashi and A. Usui
Jpn. J. Appl. Phys. 42 (2003) L1-3
Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation
A. Usui, T. Ichihashi, K. Kobayashi, H. Sunakawa, Y. Oshima, T. Eri and M. Shibata
phys. stat. sol. (a) 194 (2002) pp.572-575
Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation
Y. Oshima, T. Eri, M. Shibata, H. Sunakawa and A. Usui
phys. stat. sol. (a) 194 (2002) pp.554-558
Books and review papers
・Gallium Oxide Materials Properties, Crystal Growth, and Devices (Springer, 2020)
Chapter 11 "Halide Vapor Phase Epitaxy 2-Heteroepitaxial Growth of α- and ε-Ga2O3"
ISBN: 9783030371524
・Materials issues and devices of α- and β-Ga2O3
E. Ahmadi and Y. Oshima
J. Appl. phys. 126 (2019) 160901
・ Handbook of Solid State Chemistry (Wiley, 2017)
Part 2, Chapter 16 “Growth of wide bandgap semiconductors by halide vapor phase epitaxy”
ISBN: 9783527691036
・「バンドギャップエンジニアリング-次世代高効率デバイスへの挑戦-」(シーエムシー出版 2011年)
II-1章「バンドギャップエンジニアリングにおける結晶成長技術」
ISBN-10: 4781305083
・「発光・照明材料」(日刊工業新聞社 2010年)
2.2.2節 「GaN」
ISBN-10: 4526065749
・"Technology of Gallium Nitride Crystal Growth" (Springer, 2010)
Chapter4 "Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy using Void-Assisted Separation Technology"
ISBN-10: 3642048285
・「高輝度LED材料のはなし」(日刊工業新聞社 2005年)
第3章「GaNバルク基板」
ISBN-10: 4526055573
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