Advanced Electronic Materials Center
Aiming to develop next-generation semiconductor materials using combinatorial methods and nanostructural assessment technologies
We are efficiently promoting research on the materials that will be necessary for future devices such as high-k dielectric insulators, metal gate materials and functional films on Si demanded by next-generation integrated circuits using composites of inorganic or organic materials, by applying combinatorial techniques, with composition spread of oxides, metal aloying and mixing of organic materials.
Managing Director's Greeting
- Managing Director
- Toyohiro CHIKYO
At the Advanced Electronic Materials Center, we seek to develop next-generation semiconductor materials having nanostructures using combinatorial methods and nanostructural assessment technologies that have been produced here. Specifically, we aim to develop next-generation metallic gate materials, highly di-electric (New High-K) materials and insulator membrane (Low-K) materials while looking to research the efficacy of these materials at the device level. Moreover, we are proceeding, – from the materials aspect, such as finding out the capacity and impurities in the material as well as defects at the nanometer levels – with development of next-generation integrated circuits (ICs).
News / Press Release
Development of Multiple-Valued Logic Level Transistor Using Molecular Wire
– Opening the Way to Future Molecular Devices and Molecular Wiring –
Success in Trial Manufacture of BN/Si Heterodiode Solar Cell
–World's First High Durability Solar Cell with Space Applications and Potential Transparency –
Advanced Device Materials Group
We seek to develop – in an efficient yet structured manner – new-gate insulator materials, metal-gate materials and dielectric membrane materials needed for realizing next-generation silicon integrated circuits, by using combinatorial methods. Furthermore, we seek to develop organic devices and related new materials.
| Group Leader | Toyohiro CHIKYO | ||
|---|---|---|---|
| Group Member | Michiko YOSHITAKE | Yutaka WAKAYAMA | Motoharu IMAI |
| Hideki ABE | Shinjiro YAGYU | Yoshiyuki YAMASHITA | |
| Chisato NIIKURA | Takahiro NAGATA | Naoto UMEZAWA | |
Nano Device Characterization Group
We seek to develop equipment for fabricating nanostructures of all sizes, to carry out organized assessments concerning diffusion of impurities, initiation of defects as well as control thereto – plus related electrical properties – and to collect fundamental knowledge for future conventional nano-3D devices.
| Group Leader | Takashi SEKIGUCHI | ||
|---|---|---|---|
| Group Member | Yoshiki SAKUMA | Naoki FUKATA | Yoshihiro IROKAWA |
Wide Band Gap Semi Conductor Group
| Group Leader | Shojiro KOMATSU | ||
|---|---|---|---|
Contact to Center
Advanced Electronic Materials, NIMS
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN
TEL. +81-29-860-4725
