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Wide Bandgap Materials Group

Wide Bandgap Materials (WBMs), such as diamond and nitrides, are attractive optical and electronic materials for reducing the energy consumption. However, several issues to be solved, such as difficulty in control of electrical conductivity, insufficient interface property, and lack of wide substrate wafer, are remained. These issues are strongly linked to the material intrinsic properties. In our group, a formation of excellent heterojunction between WBMs, heterointerfaces between WBMs and high-permittivity insulators, metal/WBMs and pn-junction interfaces will be studied to clarify a mechanism of their carrier transport and photo/electro-luminescence. In addition, researches on growth of high quality WBMs and their impurity doping control will be carried out.

Specialized Research Field

In the third mid-term project, our group demonstrated (1) diamond FET using high-permittivity insulator and understanding the FET operation mechanism, (2) diamond pn-junction ultraviolet sensor and electron emission source, (3) high-voltage diamond rectifying metal contact, (4) diamond micro-machine system switch, and (5) photoelectric conversion device using InGaN pin diodes. In the fourth mid-term project, for improving the performance of these prototype devices, we will develop a guideline to design opto/electric devices suitable for WBMs through the deep understanding of effect of interface formation, doping and defects on the device performance.

Group Leader

"Naoki OHASHI" Image


Inquiry about this page

Wide Bandgap Materials Group
1-1 Namiki, Tsukuba, Ibaraki, 305-0047 JAPAN
TEL: +81-29-860-4310
E-Mail: kinou-inquiry=ml.nims.go.jp(Please change "=" to "@")
National Institute for Materials Science (NIMS)
1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN