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Surface Physics and Characterization Group

Surface Physics and Characterization Group aims at explication of the physical development used for state-of-the-art technology. The process of the surface reaction and the change of physical properties formed by a reaction are considered in physico-chemistry. If it's a project study of NIMS to run after the target which should be used for industry and near view-like, the goal of our group is to elucidate the physical development used by the project.

Specialized Research Field

The research subject progressing at present is indicated below.
  • With frequency dispersion of dielectricity or luminescence, charge transition dynamics at surface, interface, and defects, is chased aiming at advanced control of functionalities involved in materials,
  • Researching phenomena at surfaces and interfaces for various materials with a interests of an interface of a solid and an ion liquid. The study is basic research for field effect devices,
  • Find a relation of a surface stress and a structure of the surface, gas adsorption on the surface,
  • Elucidate diffusion path of atoms in a material, and control the effect of such atoms on the mechanical properties.


Topics

From a research sample to practical devices -Evolution of characterization

"Multi-dimensional mapping of GaN:Eu red LED" Image

Multi-dimensional mapping of GaN:Eu red LED


Photoluminescence is the first screening technique for luminescent semiconductors. Despite that, the actual opto-electronic devices are operated with charges (current) rather than light.
Recently, we developed a multi-dimensional mapping technique for light emitting diodes (LED). The mapping that adopts pulse-driven frequency as an axis revealed a nanoscale luminescence mechanism in GaN:Eu LED (a next-generation GaN-based red LED: Produced by Osaka University), and clarified interactions between emission centers and injection charges, which were different from interactions in the photoluminescence.


Bulletin Board

From “Surface Physics Group” to “Surface Physics and Characterization Group”

We changed our group name on April 1st, 2016: Now we are “Surface Physics and Characterization Group”. We partly take over former group works, and advance the frontiers of surface and interface physics.


Announcement of Workshop 2016

A workshop “Solution to quenching problems of nano opto-electronic materials in international framework” was held in Kyoto University on August 19th, 2016. For more details, please come to the workshop homepage.


Recent Publications

The list of recent papers and books. The other publications can be checked with the Related Link "NIMS Researchers Database" at the bottom of the list or "Group Member" at the top of this page.

2016
  • M. Ishii, A. Koizumi, and Y. Fujiwara, “Dimerization of emission centers in Eu-doped GaN red light emitting diode: Cooperative charge capturing using valence states coupling”, Journal of Physics: Condensed Matter Vol. 29, 025702 (2017). doi:10.1088/0953-8984/29/2/025702
  • M. Ishii, A. Koizumi, Y. Fujiwara : “Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current” Jpn. J. Appl. Phys 55[1] (2016) 015801-1 DOI:10.7567/JJAP.55.015801

2015
  • Y. Kamon, Y. Kitayama, A. Itakura, K. Fukazawa, K. Ishihara, T. Takeuchi : “Synthesis of Grafted Phosphorylcholine Polymer Layers as Specific Recognition Ligands for C-Reactive Protein via Optimization of” Phys. Chem. Chem. Phys. 17[15] (2015) 9951-9958 DOI:10.1039/c5cp00469a
  • 板倉明子 : “真空基礎講座 真空部品と可動機構” JOURNAL OF THE VACUUM SOCIETY OF JAPAN 58[8] (2015) 282-291
  • 宮内直弥, 鈴木 真司, 高木 祥示, 後藤 哲二, 村瀬義治, 板倉明子 : “ステンレス表面上の透過水素分布の観察” JOURNAL OF THE VACUUM SOCIETY OF JAPAN 58[10] (2015) 387-391
  • 板倉明子 : “曇らない鏡の秘密 他” すごいぞ ! 身のまわりの表面科学 (ブルーバックス) (2015) 12-16
  • M. Ishii, A. Koizumi, Y. Fujiwara : “Nanoscale determinant to brighten up GaN:Eu red LED: Local potential of Eu-defect complexes” J. Appl. Phys. 117[15] (2015) 155307-1 DOI:10.1063/1.4918662
  • M. Ishii, S. Fuchi, Y. Takeda : “Interaction of Nd dopants with broadband emission centers in Bi2O3–B2O3 glass: Local energy balance and its influence on optical properties” J. Phys.-Condes. Matter 27[39] (2015) 395402-1 DOI:10.1088/0953-8984/27/39/395402
  • M. Ishii, A. Koizumi, Y. Fujiwara : “Three-dimensional spectrum mapping of bright emission centers: investigating the brightness-limiting process in Eu-doped GaN red light emitting diodes” Appl. Phys. Lett. 107[8] (2015) 082106-1 DOI:10.1063/1.4929531


Group Leader

"Akiko ITAKURA" Image

Akiko ITAKURA


Group Member

Inquiry about this page

Surface Physics and Characterization Group
1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
E-Mail: ISHII.Masashi=nims.go.jp(Please change "=" to "@")
National Institute for Materials Science (NIMS)
1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
TEL.+81-(0)-29-859-2000
FAX.+81-(0)-29-859-2029