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Quantum Device Engineering Group

For the future nanoelectronic devices, novel device operation mechanisms, which are totally different from that of the conventional MOSFET, are highly required to realize low power consumption, high speed operation and further miniaturization. Spin transport or electron tunneling should be well controlled to solve these issues. Our main mission is to bridge between quantum effects and device engineering by assembling molecules, atoms and ions in practical device configurations.

Group Leader

"Yutaka WAKAYAMA" Image


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Quantum Device Engineering Group
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN
E-Mail: WAKAYAMA.Yutaka=nims.go.jp(Please change "=" to "@")
National Institute for Materials Science (NIMS)
1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN