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Semiconductor Device Materials Group

Due to the scaling of Si device, new higher-k gate oxide and work function tunable amorphous metal gate are urgently required. The past, our unit has been developing a combinatorial synthesis system and applying to discover new materials. Also we proposed a biased X-ray photoelectron spectroscopy to evaluate band alignment or interface electric structures. These synthesis and characterization tools can be applied to the new materials research for future nano electronics.

As the practical application of these materials, universal non volatile memory device is a candidate. Here instead of interface charge trapping, nano scale charged particles, defecst or molecules are invaded in the gate stack to investigate the feasibility.

Specialized Research Field

"Schematic illustration and practical photo image of the combinatorial synthesis" Image

Schematic illustration and practical photo image of the combinatorial synthesis




Group Leader

"Toyohiro CHIKYO" Image

Toyohiro CHIKYO


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Semiconductor Device Materials Group
1-1 Namiki, Tsukuba, Ibaraki, 305-0044 JAPAN
TEL: +81-29-860-4725
E-Mail: CHIKYO.Toyohiro=nims.go.jp(Please change "=" to "@")
National Institute for Materials Science (NIMS)
1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
TEL.+81-(0)-29-859-2000
FAX.+81-(0)-29-859-2029