(“High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design,” Kosuke Matsuzaki*, Kou Harada, Yu Kumagai, Shogo Koshiya,
Koji Kimoto,
Shigenori Ueda, Masato Sasase, Akihiro Maeda, Tomofumi Susaki, Masaaki Kitano, Fumiyasu Oba*, and Hideo Hosono; doi:
10.1002/adma.201801968)