(D)	Dr. Shigeki Otani	(OTANI.Shigeki@nims.go.jp)
	Dr. Takaho Tanaka	(TANAKA.Takaho@nims.go.jp)
	Dr. Yasumichi Mori	(MORI.Yasumichi@nims.go.jp)
	Dr. Takashi Aizawa	(AIZAWA.Takashi@nims.go.jp)
	Dr. Wataru Hayami	(HAYAMI.Wataru@nims.go.jp)
	Dr. Takao Mori	(MORI.Takao@nims.go.jp)

The boride group performs research on refractory borides, which consist of two- or three-dimentional boron-networks. The borides have high melting points, 2000-3500°C, and characteristic bulk and surface properties. Therefore, we develop technology for growing the large crystals with high quality and search new phenomena regarding the bulk and surface properties. We also develop a substrate for Group III nitride semiconductors.

1. Single-crystal growth of refractory compounds.
2. Search of novel boron-rich borides. ( by T. Tanaka. Last modified on 23 July 2002 )
   • Single Crystal Growth of Boron-rich borides. ( by T. Tanaka. Last modified on 26 July 2002 )
3. Characterization and solid state physics.
4. Surface science of borides and related materials.
   • Study of Transition-metal Diboride Surfaces. ( by T. Aizawa. Last modified on 18 December 2002 )

• DSBB02 ( The first domestic symposium on boron, boride and related compounds 2002 ) were held on 13 Dec. 2002 at Hakone, Kanagawa, JAPAN.
• DSBB03 will be held on 12-13 Dec. 2003 at Matsushima, Miyagi, JAPAN.
• Telephone number has been changed. (24 March 2003)