Z. C. Wen

Post Doctoral Research Associate
Spintronics Group, Magnetic Materials Center

email: WEN.Zhenchao@nims.go.jp

Phone: +81-29-859-2000 (x6729); Fax: +81-29-859-2701

EDUCATION

• 2010 Ph.D. Institute of Physics, Chinese Academy of Sciences
• 2005 B.S. Lanzhou University, China

PROFESSIONAL EXPERIENCE

• 2010-present: Post Doctoral Research Associate, Spintronics Group, Magnetic Materials Center, NIMS

RESEARCH INTEREST

• Magnetic tunnel junctions
• Co-based Heusler alloys
• Spin transfer torque effect
• Magnetic rings

Publications

• Z. C. Wen, H. X .Wei, and X. F. Han, “Patterned nanoring magnetic tunnel junctions”, Appl. Phys. Lett. 91 (2007) 122511
• X. -G. Zhang, Z. C. Wen, H. X. Wei and X. F. Han, “Giant Coulomb blockade magnetoresistance in magnetic tunnel junctions with a granular layer”, Phys. Rev. B 81 (2010) 155122
• M. Li, Z. C. Wen, J. X. Fu, X. Fang, Y. M. Dai, R. J. Liu, X. F. Han, and X. G. Qiu, “Composite metamaterials with dual-band magnetic resonances in the THz regime” J. Phys. D: Appl. Phys. 42 (2009) 115420
• X. F. Han, Z. C. Wen, and H. X. Wei, “Nanoring MTJ and its application in MRAM demo devices with spin-polarized current switching (Invited talk and paper)”, J. Appl. Phys. 103 (2008) 07E933
• X. F. Han, Z. C. Wen, Y. Wang, L. Wang and H. X. Wei, “Nano-scale Patterned MTJ and Its Device Applications (Invited)”, AAPPS Bulletin 18 (6) (2008) 24
• H. X. Wei , Q. H. Qin, Z. C. Wen, X. F. Han and X. -G. Zhang, “MTJ sensor with Co/Pt perpendicular anisotropy ferromagnetic layer”, Appl. Phys. Lett. 94 (2009) 172902
• H. X. Wei , J. X. He, Z. C. Wen, X. F. Han, S. Zhang, “Effects of the current on the nanoscale ring-shaped magnetic tunnel junctions” Phys. Rev. B 77 (2008) 134432