T. Niizeki
Post Doctoral Research Associate
Spintronics Grop, Magnetic Materials Center
email: niizeki.tomohiko@nims.go.jp
Phone: +81-29-859-####: Fax: +81-29-859-2701
EDUCATION
- 2005 Dr. Eng in Applied Physics, School of Engineering, Tohoku University
- 2002 M.E Applied Physics, School of Engineering, Tohoku University
- 2000: B.E. Applied Physic, Scool of Engineering, Tohoku University
PROFESSIONAL EXPERIENCE
- 2009-present: Post Doctoral Research Associate, Spintronics Group, Magnetic
Materials Center, NIMS
- 2007-2009: Post Doc Fellow, CRANN, Trinity College, Doublin, Ireland
- 2006-2007: Post Doc Fellow, Tohoku University
- 2005-2006: JSPS Fellow, Tohoku University
RESEARCH INTEREST
Publications
- T. Niizeki, N. Tezuka, and K. Inomata, gEnhanced Tunnel Magnetoresistance
due to Spin Dependent Quantum Well Resonance in Specific Symmetry
States of an Ultrathin Ferromagnetic Electrodeh, Phys. Rev. Lett.
100, 047207 (2008)
- T. Niizeki, H. Kubota, Y. Ando, and T. Miyazaki, gFabrication of ferromagnetic
single-electron tunneling devices by utilizing metallic nanowire
as hard mask stencilh, J. Appl. Phys. 97 (2005) 10C909
- T. Niizeki, H. Kubota, Y. Ando, and T. Miyazaki, gNanofabrication of
magnetic tunnel junctions using electron beam lithographyh, J. Magn. Magn.
Mater., 272-276 (2004) 1947-1948
- T. Niizeki, H. Kubota, Y. Ando, and T. Miyazaki, gNanofabrication of magnetic
tunnel junctions using the side edge thin film depositionh, Sci. Tech.
Adv. Mat. 4 (2003) 347-352
