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Magnetization Damping of an L10-FeNi Thin Film with Perpendicular Magnetic Anisotropy

Applied Physics Letters

2013年12月2日(月)
(2013.12.02 更新)

Applied Physics Letters ( DOI: 10.1063/1.4845035 )
Misako Ogiwara ( IMR, Tohoku Univ. )
Satoshi Iihama ( Tohoku Univ )
Takeshi Seki ( IMR, Tohoku Univ. )
Takayuki Kojima ( IMR, Tohoku Univ. )
Shigemi Mizukami ( WPI-AIMR, Tohoku Univ )
Masaki Mizuguchi ( IMR, Tohoku Univ. )
Koki Takanashi ( IMR, Tohoku Univ. )

Abstract

We studied on the magnetic damping constants (α) for L10-FeNi and disordered FeNiemploying three kinds of measurement methods.
An L10-FeNi thin film exhibited highperpendicular magnetic anisotropy of 7.1 × 106 erg cm-3.
At magnetic fields (H) lower than 2kOe, α was estimated to be 0.091 ± 0.003.
However, it was reduced down to 0.013 ± 0.001with H, indicating that extrinsic contributions enhance α.
The intrinsic α = 0.013 ± 0.001was comparable to α = 0.009 ± 0.002 for the disordered FeNi.
This suggests that L10-FeNiis a candidate achieving high magnetic anisotropy and low magnetization dampingsimultaneously.

その他特記事項

Grant-in-Aid for Scientific Research(S) (25220910)


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