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Schottky junctions studied using Korringa--Kohn–-Rostoker nonequilibrium Green’s function method

APS March meeting, Mar. 13-17, New Orleans. Louisiana, USA

2017年3月13日(月)

H. Akai and M. Ogura

Abstract

A scheme that combines the non-equilibrium Greens function method with the Korringa–Kohn–Rostoker (KKR) Greens function method is proposed. The method is different from many previous attempts in that it uses the exact Greens function whose spectrum is not bound within a finite energy range, and hence, provides sound basis for quan- titative discussions. The scheme is applied to the Schottky junctions composed of an Al/GaN/Al trilayer. Schottky contacts formed in metal/semiconductor junctions play an important role in semiconductor devices and integrated circuits. They have been intensively investigated for several decades not only for possible application to electronic devices but also for gaining a fundamental understanding of the Schottky barrier formation. Our results show that the Schottly barrier is formed between an undoped GaN and Al interface. The transport property of this sys- tem under various finite bias voltages is calculated. It is shown that the asymmetric behavior of electron transport against the direction of bias voltage occurs in this system, confirming the feature of rectification.

その他特記事項

Partly supported by Grant-in-Aid No. 22104012, MEXT, by the Alexander von Humboldt Foundation, and by the Elements Strategy Initiative Project (ESICMM)


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